A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction View Full Text


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Article Info

DATE

2012-03

AUTHORS

Zhaolin Yuan, Junsheng Yu, Wenming Ma, Yadong Jiang

ABSTRACT

A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid heterojunction. The current–voltage (I–V) characteristics of ITO/ZNAs/P3HT/Ag device in the dark and under illumination with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram. More... »

PAGES

511-515

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00339-011-6756-7

DOI

http://dx.doi.org/10.1007/s00339-011-6756-7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003109868


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46 schema:description A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid heterojunction. The current–voltage (I–V) characteristics of ITO/ZNAs/P3HT/Ag device in the dark and under illumination with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram.
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