Femtosecond laser irradiation of metal and thermal oxide layers on silicon: studies utilising cross-sectional transmission electron microscopy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-06

AUTHORS

T.H.R. Crawford, J. Yamanaka, E.M. Hsu, G.A. Botton, H.K. Haugen

ABSTRACT

We present the results of 800 and 400 nm wavelength, femtosecond laser pulse irradiation of a sample consisting of a metal film on thermally-grown oxide on silicon. On selected sites, cross-sectional transmission electron microscopy was performed to provide information on sub-surface changes not observable with surface scanning electron microscopy. A range of pulse energies in single-pulse irradiation exists for which the metal film was removed but the oxide was not appreciably thinned. For a sufficiently high pulse energy within this range, substantial defects were observed in the underlying silicon. Five infrared pulses of a relatively high fluence created significant defects, as well as producing polycrystalline material on top of the original oxide and metal. We discuss various factors which may play a role in the formation of the observed features. More... »

PAGES

473-478

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00339-008-4433-2

DOI

http://dx.doi.org/10.1007/s00339-008-4433-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1029802556


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