Ontology type: schema:ScholarlyArticle
2005-03-02
AUTHORST.Z. Lu, J. Shen, B. Mereu, M. Alexe, R. Scholz, V. Talalaev, M. Zacharias
ABSTRACTA metal–oxide–semiconductor structure containing a single layer of size-controlled silicon nanocrystals embedded into gate oxide was fabricated. Size control for the silicon nanocrystals was realized by using a SiO2/SiO/SiO2 layer structure with the embedded SiO layer having the thickness of the desired Si nanocrystals and using a high-temperature annealing for forming the silicon nanocrystals. Current–voltage, capacitance–voltage, and conductance–voltage characteristics were measured for a sample containing 4-nm-sized crystals. From the Fowler–Nordheim plot an effective barrier height of 1.6 eV is estimated for our silicon nanocrystals. Electron trapping, storing, and de-trapping in silicon nanocrystals were observed by capacitance–voltage and conductance–voltage measurements. The charge density was measured to be 1.6×1012 /cm2, which is nearly identical to the silicon-nanocrystal density measured approximately via a transmission electron microscopy image. Conductance measurements reveal a very low interface charge of our structure. More... »
PAGES1631-1634
http://scigraph.springernature.com/pub.10.1007/s00339-005-3220-6
DOIhttp://dx.doi.org/10.1007/s00339-005-3220-6
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1026049559
JSON-LD is the canonical representation for SciGraph data.
TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT
[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Engineering",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Materials Engineering",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany",
"id": "http://www.grid.ac/institutes/grid.450270.4",
"name": [
"Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
],
"type": "Organization"
},
"familyName": "Lu",
"givenName": "T.Z.",
"id": "sg:person.015004614047.38",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015004614047.38"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany",
"id": "http://www.grid.ac/institutes/grid.450270.4",
"name": [
"Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
],
"type": "Organization"
},
"familyName": "Shen",
"givenName": "J.",
"id": "sg:person.07674503647.40",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07674503647.40"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany",
"id": "http://www.grid.ac/institutes/grid.450270.4",
"name": [
"Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
],
"type": "Organization"
},
"familyName": "Mereu",
"givenName": "B.",
"id": "sg:person.011155761701.43",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011155761701.43"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany",
"id": "http://www.grid.ac/institutes/grid.450270.4",
"name": [
"Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
],
"type": "Organization"
},
"familyName": "Alexe",
"givenName": "M.",
"id": "sg:person.0623260666.89",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0623260666.89"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany",
"id": "http://www.grid.ac/institutes/grid.450270.4",
"name": [
"Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
],
"type": "Organization"
},
"familyName": "Scholz",
"givenName": "R.",
"id": "sg:person.01304264107.30",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01304264107.30"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany",
"id": "http://www.grid.ac/institutes/grid.450270.4",
"name": [
"Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
],
"type": "Organization"
},
"familyName": "Talalaev",
"givenName": "V.",
"id": "sg:person.0615207126.40",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0615207126.40"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany",
"id": "http://www.grid.ac/institutes/grid.450270.4",
"name": [
"Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany"
],
"type": "Organization"
},
"familyName": "Zacharias",
"givenName": "M.",
"id": "sg:person.0647503447.64",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0647503447.64"
],
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1007/s003390000553",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1040624423",
"https://doi.org/10.1007/s003390000553"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1557/proc-638-f9.2.1",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1067949447",
"https://doi.org/10.1557/proc-638-f9.2.1"
],
"type": "CreativeWork"
}
],
"datePublished": "2005-03-02",
"datePublishedReg": "2005-03-02",
"description": "A metal\u2013oxide\u2013semiconductor structure containing a single layer of size-controlled silicon nanocrystals embedded into gate oxide was fabricated. Size control for the silicon nanocrystals was realized by using a SiO2/SiO/SiO2 layer structure with the embedded SiO layer having the thickness of the desired Si nanocrystals and using a high-temperature annealing for forming the silicon nanocrystals. Current\u2013voltage, capacitance\u2013voltage, and conductance\u2013voltage characteristics were measured for a sample containing 4-nm-sized crystals. From the Fowler\u2013Nordheim plot an effective barrier height of 1.6\u00a0eV is estimated for our silicon nanocrystals. Electron trapping, storing, and de-trapping in silicon nanocrystals were observed by capacitance\u2013voltage and conductance\u2013voltage measurements. The charge density was measured to be 1.6\u00d71012\u00a0/cm2, which is nearly identical to the silicon-nanocrystal density measured approximately via a transmission electron microscopy image. Conductance measurements reveal a very low interface charge of our structure.",
"genre": "article",
"id": "sg:pub.10.1007/s00339-005-3220-6",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1022207",
"issn": [
"0947-8396",
"1432-0630"
],
"name": "Applied Physics A",
"publisher": "Springer Nature",
"type": "Periodical"
},
{
"issueNumber": "8",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "80"
}
],
"keywords": [
"silicon nanocrystals",
"Si nanocrystals",
"size-controlled silicon nanocrystals",
"transmission electron microscopy images",
"size-controlled Si nanocrystals",
"electron microscopy images",
"SiO2 layer structure",
"high-temperature annealing",
"single layer",
"nanocrystals",
"Fowler-Nordheim plots",
"conductance\u2013voltage (G/\u03c9\u2013V) measurements",
"effective barrier height",
"gate oxide",
"semiconductor structures",
"size control",
"microscopy images",
"conductance-voltage characteristics",
"SiO layer",
"interface charge",
"electrical behavior",
"barrier height",
"layer structure",
"sized crystals",
"layer",
"charge density",
"annealing",
"oxide",
"conductance measurements",
"density",
"structure",
"measurements",
"thickness",
"electrons",
"height",
"crystals",
"charge",
"behavior",
"characteristics",
"images",
"samples",
"control",
"plots"
],
"name": "Electrical behavior of size-controlled Si nanocrystals arranged as single layers",
"pagination": "1631-1634",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1026049559"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1007/s00339-005-3220-6"
]
}
],
"sameAs": [
"https://doi.org/10.1007/s00339-005-3220-6",
"https://app.dimensions.ai/details/publication/pub.1026049559"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-20T07:23",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_405.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1007/s00339-005-3220-6"
}
]Download the RDF metadata as: json-ld nt turtle xml License info
JSON-LD is a popular format for linked data which is fully compatible with JSON.
curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s00339-005-3220-6'
N-Triples is a line-based linked data format ideal for batch operations.
curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s00339-005-3220-6'
Turtle is a human-readable linked data format.
curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s00339-005-3220-6'
RDF/XML is a standard XML format for linked data.
curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s00339-005-3220-6'
This table displays all metadata directly associated to this object as RDF triples.
151 TRIPLES
22 PREDICATES
70 URIs
60 LITERALS
6 BLANK NODES