One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-03

AUTHORS

W. Wu, G.-Y. Jung, D.L. Olynick, J. Straznicky, Z. Li, X. Li, D.A.A. Ohlberg, Y. Chen, S.-Y. Wang, J.A. Liddle, W.M. Tong, R. Stanley Williams

ABSTRACT

We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir–Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on both top and bottom electrodes. Read, write, erase and cross talking were also investigated. More... »

PAGES

1173-1178

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00339-004-3176-y

DOI

http://dx.doi.org/10.1007/s00339-004-3176-y

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1052842109


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