Femtosecond laser pulse ablation of GaAs and InP: studies utilizing scanning and transmission electron microscopy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-08

AUTHORS

A. Borowiec, M. MacKenzie, G.C. Weatherly, H.K. Haugen

ABSTRACT

Single pulse laser ablation of GaAs and InP using 130 fs light pulses at ≈800 nm was studied with various techniques, in particular, scanning and transmission electron microscopies. The final state of the material near the laser-ablated region following femtosecond ablation was characterized in detail for selected laser fluences. Threshold ablation laser fluences were also obtained for both compounds. More... »

PAGES

411-417

Journal

TITLE

Applied Physics A

ISSUE

3-4

VOLUME

77

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00339-002-1949-8

DOI

http://dx.doi.org/10.1007/s00339-002-1949-8

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049127453


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