N+BF2 and N+C+BF2 high-dose co-implantation in silicon View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2003-03

AUTHORS

L. Barbadillo, M. Cervera, M.J. Hernández, P. Rodríguez, J. Piqueras, S.I. Molina, A. Ponce, F.M. Morales

ABSTRACT

Nitrogen and boron BF2, and nitrogen, carbon, and boron BF2 high-dose (6×1016–3×1017 cm-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si3N4 inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si3N4 too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%. More... »

PAGES

791-800

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00339-002-1503-8

DOI

http://dx.doi.org/10.1007/s00339-002-1503-8

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019332899


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