Quantum dots for GaAs-based surface emitting lasers at 1300 nm View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2007-06-30

AUTHORS

M. Grundmann , N. N. Ledentsov , F. Hopfer , F. Heinrichsdorff , F. Guffarth , D. Bimberg , V. M. Ustinov , A. E. Zhukov , A. R. Kovsh , M. V. Maximov , Yu. G. Musikhin , Zh. I. Alferov , J. A. Lott , N. D. Zhakharov , P. Werner

ABSTRACT

InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser diodes. Similar recombination spectra are obtained by employing the two different approaches of seeding and overgrowth with a quantum well. Despite the shift to larger wavelengths a large separation (=80 meV) between excited states is maintained. The introduction of such QD's into a vertical cavity leads to strong narrowing of the emission spectrum. Lasing from a 1300 nm InGaAs quantum dot VCSEL is reported. More... »

PAGES

589-597

Book

TITLE

Advances in Solid State Physics 40

ISBN

978-3-540-41576-3

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bfb0108381

DOI

http://dx.doi.org/10.1007/bfb0108381

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1051072929


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