Current sustainability and electromigration of Pd, Sc and Y thin-films as potential interconnects View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2010-09

AUTHORS

Yong Yang, Shengyong Xu, Sishen Xie, Lian-Mao Peng

ABSTRACT

The progress on novel interconnects for carbon nanotube (CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors. The Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects, as it requires electrochemical deposition followed by chemical-mechanical polishing. We report our experimental results on the failure current density, resistivity, electromigration effect and failure mechanism of patterned stripes of Pd, Sc and Y thin-films, regarding them as the potential novel interconnects. The Pd stripes have a failure current density of (8∼10)×106 A/cm2 (MA/cm2), and they are stable when the working current density is as much as 90% of the failure current density. However, they show a resistivity around 210 μΩ·cm, which is 20 times of the bulk value and leaving room for improvement. Compared to Pd, the Sc stripes have a similar resistivity but smaller failure current density of 4∼5 MA/cm2. Y stripes seem not suitable for interconnects by showing even lower failure current density than that of Sc and evidence of oxidation. For comparison, Au stripes of the same dimensions show a failure current density of 30 MA/cm2 and a resistivity around 4 μΩ·cm, making them also a good material as novel interconnects. More... »

PAGES

184-189

Journal

TITLE

Nano-Micro Letters

ISSUE

3

VOLUME

2

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf03353639

DOI

http://dx.doi.org/10.1007/bf03353639

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1042447796


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