The metallurgical control of electromigration failure in narrow conducting lines View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1996-05

AUTHORS

J. W. Morris, C. -U. Kim, S. H. Kang

ABSTRACT

Electromigration is a serious potential source of failure in the narrow, thin-film Al-Cu conductors used in modern microelectronic devices. The problem has become more acute as line widths have shrunk to below one micrometer, creating lines with quasi-bamboo microstructures. The usual mechanism of internal electromigration failure in such lines involves the formation of a transgranular void across a bamboo grain at the upstream end of a long, polygranular segment, preceded by the depletion of copper from both the polygranular segment and the upstream bamboo grain. At least three metallurgical mechanisms are available to inhibit this failure mechanism and improve the useful lifetime of the line, Each of these methods has been demonstrated in the laboratory environment. More... »

PAGES

43-46

Journal

TITLE

JOM

ISSUE

5

VOLUME

48

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf03222942

DOI

http://dx.doi.org/10.1007/bf03222942

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1038683341


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