Radiation damage of oxygenated silicon diodes by 27 MeV protons View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-11

AUTHORS

D. Bisello, M. Descovich, A. Kaminsky, D. Pantano, J. Wyss, A. Zanet

ABSTRACT

The radiation damage induced by 27 MeV protons has been studied on diodes fabricated from standard and oxygen-enriched FZ substrates. Measurements confirm that the damage constant α is insensitive to the oxygen concentration whereas the acceptor creation rate parameter β is lower for oxygenated diodes. However, the effect is significantly smaller than that observed with high-energy protons, but somewhat higher than that by reactor neutrons. Data have been collected at the irradiation facility of the Tandem at the INFN Laboratories of Legnaro. More... »

PAGES

1377-1382

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf03185603

DOI

http://dx.doi.org/10.1007/bf03185603

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045625059


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