Influence of surface damage on highly segmented silicon detectors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-11

AUTHORS

C. Gössling, C. Lichau, M. Peters, J. Wüstenfeld, R. Wunstorf

ABSTRACT

Highly segmented silicon detectors have already been used in high-energy physicsexperimentsfor a long time. But in future experimentsthey will have to survive for several years in harsh radiation environments. Their performance will degenerate due to irradiation-induced bulk and surface damage. Whereas bulk damage is design independent and has been successfully under investigation for a long time now, the design-related surface damage and its consequences for a highly segmented detector are not well known yet. Therefore, we have developed a test device and irradiated it systematically with low-energy electrons. FromI-V curves before and after irradiation we have determined the influence of surface damage on the leakage current of single-pixel cells. As a main result it was found that, depending on the design, only a fraction of the surface area contributes to the interface generation current after surface damage. More... »

PAGES

1369-1376

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf03185602

DOI

http://dx.doi.org/10.1007/bf03185602

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1030733508


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