Characterization ofp-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 × 1014 ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-11

AUTHORS

D. Morgan, C. M. Buttar, J. R. Carter, I. Dawson, K. Hara, R. Harper, Y. Iwata, T. Kohriki, T. Kondo, T. Ohsugi, D. Robinson, M. Shimojima, S. Terada, Y. Unno

ABSTRACT

P-in-n silicon microstrip prototype detectors for the ATLAS experiment at CERN have been designed and manufactured byHamamatsu Photonics. Detectors were irradiated at the CERN Proton Synchrotron facility to a fluence of 3×1014 pcm-2, corresponding to the total fluence anticipated after ten years of operation in the ATLAS semiconductor tracker. Theywere subsequentlyannealed for 7 days at 25°C in order to reach the end of the beneficial annealing period and hence the minimum in depletion voltage. The characteristics of 4 different detector designs have been evaluated. The pre-irradiation behaviour of all detectors is consistent and well within the specifications for ATLAS detectors. Similarly, the post-irradiation and anneal performance for all detectors shows excellent behaviour. This is in terms of both the leakage current characteristics and the signal and noise performance as determined from LHC speed readout electronics. The detector characteristics are such that operation within the maximum operating voltage envisaged for ATLAS is possible. More... »

PAGES

1245-1251

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf03185590

DOI

http://dx.doi.org/10.1007/bf03185590

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1053551016


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