Reliability and degradation mechanism of inGaAsP/lnP semiconductor lasers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1990-11

AUTHORS

Mitsuo Fukuda, Tetsuhiko Ikegami

ABSTRACT

The degradation modes during long term aging over 10 000 hours are clarified for over 1 500 InGaAsP/lnP buried heterostructure lasers. The degradation of buried heterostructure interface is the main cause of wear-out failure and greatly influences aging behaviour such as the rate of increase in operating current. Additionally, it is confirmed that the instability of the bonding solder metal is a cause of sudden failure. More... »

PAGES

625-629

Journal

TITLE

Annals of Telecommunications

ISSUE

11-12

VOLUME

45

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02995713

DOI

http://dx.doi.org/10.1007/bf02995713

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1086022008


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