Localization effects in disordered thin zinc and tin films at low temperature View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1990-12

AUTHORS

A. K. Meikap, A. R. Jana, S. K. De, S. Chatterjee

ABSTRACT

Resistance measurements in zero field ΔR(T)/RO and in presence of strong magnetic field ΔR(H)/R have been performed on thin two-dimensional and quasi two-dimensional zinc and tin films in the temperature range 1.6 K ≤T ≤ 100 K and fields up to 0–7 Tesla. The zinc film shows the logarithmic increase in sheet resistance at low temperature, whereas the tin film does not show such an anomaly due to its comparatively higher superconducting transition temperature. The electrical resistivity is nearly linear in the normal state which indicates that for higher temperature the predominant electron scattering mechanism is due to usual phonon interaction. The magnetoresistances of all our samples are positive and saturated at high field. All these results are discussed in the light of electron localization theory including other interaction effects in the weak disorder limit. More... »

PAGES

305-310

References to SciGraph publications

  • 1982-08. Inelastic life-time of the conduction electrons in some noble metal films in ZEITSCHRIFT FÜR PHYSIK B CONDENSED MATTER
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/bf02834544

    DOI

    http://dx.doi.org/10.1007/bf02834544

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1029984132


    Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
    Incoming Citations Browse incoming citations for this publication using opencitations.net

    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Engineering", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Materials Engineering", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India", 
              "id": "http://www.grid.ac/institutes/grid.417929.0", 
              "name": [
                "Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Meikap", 
            "givenName": "A. K.", 
            "id": "sg:person.012250071625.63", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012250071625.63"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India", 
              "id": "http://www.grid.ac/institutes/grid.417929.0", 
              "name": [
                "Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Jana", 
            "givenName": "A. R.", 
            "id": "sg:person.014010541437.24", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014010541437.24"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India", 
              "id": "http://www.grid.ac/institutes/grid.417929.0", 
              "name": [
                "Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India"
              ], 
              "type": "Organization"
            }, 
            "familyName": "De", 
            "givenName": "S. K.", 
            "id": "sg:person.014645475665.43", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014645475665.43"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India", 
              "id": "http://www.grid.ac/institutes/grid.417929.0", 
              "name": [
                "Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Chatterjee", 
            "givenName": "S.", 
            "id": "sg:person.014033667751.27", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014033667751.27"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1007/bf02026422", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1045371214", 
              "https://doi.org/10.1007/bf02026422"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "1990-12", 
        "datePublishedReg": "1990-12-01", 
        "description": "Resistance measurements in zero field \u0394R(T)/RO and in presence of strong magnetic field \u0394R(H)/R have been performed on thin two-dimensional and quasi two-dimensional zinc and tin films in the temperature range 1.6 K \u2264T \u2264 100 K and fields up to 0\u20137 Tesla. The zinc film shows the logarithmic increase in sheet resistance at low temperature, whereas the tin film does not show such an anomaly due to its comparatively higher superconducting transition temperature. The electrical resistivity is nearly linear in the normal state which indicates that for higher temperature the predominant electron scattering mechanism is due to usual phonon interaction. The magnetoresistances of all our samples are positive and saturated at high field. All these results are discussed in the light of electron localization theory including other interaction effects in the weak disorder limit.", 
        "genre": "article", 
        "id": "sg:pub.10.1007/bf02834544", 
        "inLanguage": "en", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1144647", 
            "issn": [
              "1001-4381"
            ], 
            "name": "Journal of Materials Engineering", 
            "publisher": "Springer Nature", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "4", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "12"
          }
        ], 
        "keywords": [
          "TiN films", 
          "strong magnetic field", 
          "electron scattering mechanism", 
          "temperature range 1.6 K", 
          "phonon interaction", 
          "magnetic field", 
          "scattering mechanism", 
          "localization effects", 
          "high fields", 
          "zinc films", 
          "low temperatures", 
          "localization theory", 
          "thin zinc", 
          "normal state", 
          "two-dimensional zinc", 
          "films", 
          "sheet resistance", 
          "disorder limit", 
          "resistance measurements", 
          "electrical resistivity", 
          "field", 
          "magnetoresistance", 
          "transition temperature", 
          "weak disorder limit", 
          "temperature", 
          "Tesla", 
          "high temperature", 
          "resistivity", 
          "light", 
          "logarithmic increase", 
          "measurements", 
          "state", 
          "limit", 
          "theory", 
          "interaction effects", 
          "interaction", 
          "effect", 
          "samples", 
          "mechanism", 
          "presence", 
          "anomalies", 
          "results", 
          "zinc", 
          "increase", 
          "resistance", 
          "range 1.6 K", 
          "predominant electron scattering mechanism", 
          "usual phonon interaction", 
          "electron localization theory"
        ], 
        "name": "Localization effects in disordered thin zinc and tin films at low temperature", 
        "pagination": "305-310", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1029984132"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1007/bf02834544"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1007/bf02834544", 
          "https://app.dimensions.ai/details/publication/pub.1029984132"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2021-12-01T19:08", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_248.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1007/bf02834544"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/bf02834544'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/bf02834544'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/bf02834544'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/bf02834544'


     

    This table displays all metadata directly associated to this object as RDF triples.

    131 TRIPLES      22 PREDICATES      76 URIs      67 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1007/bf02834544 schema:about anzsrc-for:09
    2 anzsrc-for:0912
    3 schema:author N3b4cee25b00645d09434e8a525adb899
    4 schema:citation sg:pub.10.1007/bf02026422
    5 schema:datePublished 1990-12
    6 schema:datePublishedReg 1990-12-01
    7 schema:description Resistance measurements in zero field ΔR(T)/RO and in presence of strong magnetic field ΔR(H)/R have been performed on thin two-dimensional and quasi two-dimensional zinc and tin films in the temperature range 1.6 K ≤T ≤ 100 K and fields up to 0–7 Tesla. The zinc film shows the logarithmic increase in sheet resistance at low temperature, whereas the tin film does not show such an anomaly due to its comparatively higher superconducting transition temperature. The electrical resistivity is nearly linear in the normal state which indicates that for higher temperature the predominant electron scattering mechanism is due to usual phonon interaction. The magnetoresistances of all our samples are positive and saturated at high field. All these results are discussed in the light of electron localization theory including other interaction effects in the weak disorder limit.
    8 schema:genre article
    9 schema:inLanguage en
    10 schema:isAccessibleForFree false
    11 schema:isPartOf N8748386d11ed4ec78eda3ad4d5b3f7bd
    12 N9797e000810d41fab65c880b0218aa62
    13 sg:journal.1144647
    14 schema:keywords Tesla
    15 TiN films
    16 anomalies
    17 disorder limit
    18 effect
    19 electrical resistivity
    20 electron localization theory
    21 electron scattering mechanism
    22 field
    23 films
    24 high fields
    25 high temperature
    26 increase
    27 interaction
    28 interaction effects
    29 light
    30 limit
    31 localization effects
    32 localization theory
    33 logarithmic increase
    34 low temperatures
    35 magnetic field
    36 magnetoresistance
    37 measurements
    38 mechanism
    39 normal state
    40 phonon interaction
    41 predominant electron scattering mechanism
    42 presence
    43 range 1.6 K
    44 resistance
    45 resistance measurements
    46 resistivity
    47 results
    48 samples
    49 scattering mechanism
    50 sheet resistance
    51 state
    52 strong magnetic field
    53 temperature
    54 temperature range 1.6 K
    55 theory
    56 thin zinc
    57 transition temperature
    58 two-dimensional zinc
    59 usual phonon interaction
    60 weak disorder limit
    61 zinc
    62 zinc films
    63 schema:name Localization effects in disordered thin zinc and tin films at low temperature
    64 schema:pagination 305-310
    65 schema:productId N45dde3e663ff4bfda11ce710575b67ee
    66 Nb6e91ccd6271449fb146856ef0f6de62
    67 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029984132
    68 https://doi.org/10.1007/bf02834544
    69 schema:sdDatePublished 2021-12-01T19:08
    70 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    71 schema:sdPublisher Nd5a155a48b744bf0914cf3891e3a531c
    72 schema:url https://doi.org/10.1007/bf02834544
    73 sgo:license sg:explorer/license/
    74 sgo:sdDataset articles
    75 rdf:type schema:ScholarlyArticle
    76 N3b4cee25b00645d09434e8a525adb899 rdf:first sg:person.012250071625.63
    77 rdf:rest Na73a82dd5e8444cfba87404abd2905c6
    78 N45dde3e663ff4bfda11ce710575b67ee schema:name dimensions_id
    79 schema:value pub.1029984132
    80 rdf:type schema:PropertyValue
    81 N52eee513b009476db47313e88a9ba335 rdf:first sg:person.014645475665.43
    82 rdf:rest Naf4e351249144a629a9823a4d1aea4c0
    83 N8748386d11ed4ec78eda3ad4d5b3f7bd schema:volumeNumber 12
    84 rdf:type schema:PublicationVolume
    85 N9797e000810d41fab65c880b0218aa62 schema:issueNumber 4
    86 rdf:type schema:PublicationIssue
    87 Na73a82dd5e8444cfba87404abd2905c6 rdf:first sg:person.014010541437.24
    88 rdf:rest N52eee513b009476db47313e88a9ba335
    89 Naf4e351249144a629a9823a4d1aea4c0 rdf:first sg:person.014033667751.27
    90 rdf:rest rdf:nil
    91 Nb6e91ccd6271449fb146856ef0f6de62 schema:name doi
    92 schema:value 10.1007/bf02834544
    93 rdf:type schema:PropertyValue
    94 Nd5a155a48b744bf0914cf3891e3a531c schema:name Springer Nature - SN SciGraph project
    95 rdf:type schema:Organization
    96 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
    97 schema:name Engineering
    98 rdf:type schema:DefinedTerm
    99 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
    100 schema:name Materials Engineering
    101 rdf:type schema:DefinedTerm
    102 sg:journal.1144647 schema:issn 1001-4381
    103 schema:name Journal of Materials Engineering
    104 schema:publisher Springer Nature
    105 rdf:type schema:Periodical
    106 sg:person.012250071625.63 schema:affiliation grid-institutes:grid.417929.0
    107 schema:familyName Meikap
    108 schema:givenName A. K.
    109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012250071625.63
    110 rdf:type schema:Person
    111 sg:person.014010541437.24 schema:affiliation grid-institutes:grid.417929.0
    112 schema:familyName Jana
    113 schema:givenName A. R.
    114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014010541437.24
    115 rdf:type schema:Person
    116 sg:person.014033667751.27 schema:affiliation grid-institutes:grid.417929.0
    117 schema:familyName Chatterjee
    118 schema:givenName S.
    119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014033667751.27
    120 rdf:type schema:Person
    121 sg:person.014645475665.43 schema:affiliation grid-institutes:grid.417929.0
    122 schema:familyName De
    123 schema:givenName S. K.
    124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014645475665.43
    125 rdf:type schema:Person
    126 sg:pub.10.1007/bf02026422 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045371214
    127 https://doi.org/10.1007/bf02026422
    128 rdf:type schema:CreativeWork
    129 grid-institutes:grid.417929.0 schema:alternateName Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India
    130 schema:name Materials Science Department, Indian Association for the Cultivation of Science, 700 032, Jadavpur, Calcutta, India
    131 rdf:type schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...