Ontology type: schema:ScholarlyArticle
1993-09
AUTHORSJ. Banqueri, F. Gámiz, J. E. Carceller, P. Cartujo, J. A. López-Villanueva
ABSTRACTThe electron inversion-layer mobility in a metal oxide semiconductor field effect transistor, as a function of the transverse electric field, has been studied in the temperature range 13–300K for different interface-state densities. Experimental data are in excellent agreement with a simple semi-empirical model. However, the term attributed by other authors to phonon scattering depends on the interface-state density, even at high temperatures, and becomes negative at low temperatures. These facts are shown to be a consequence of the dependence of coulomb scattering on the transverse electric field. More... »
PAGES1159-1163
http://scigraph.springernature.com/pub.10.1007/bf02817689
DOIhttp://dx.doi.org/10.1007/bf02817689
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