Influence of the interface-state density on the electron mobility in silicon inversion layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1993-09

AUTHORS

J. Banqueri, F. Gámiz, J. E. Carceller, P. Cartujo, J. A. López-Villanueva

ABSTRACT

The electron inversion-layer mobility in a metal oxide semiconductor field effect transistor, as a function of the transverse electric field, has been studied in the temperature range 13–300K for different interface-state densities. Experimental data are in excellent agreement with a simple semi-empirical model. However, the term attributed by other authors to phonon scattering depends on the interface-state density, even at high temperatures, and becomes negative at low temperatures. These facts are shown to be a consequence of the dependence of coulomb scattering on the transverse electric field. More... »

PAGES

1159-1163

References to SciGraph publications

  • 1992-07. Kinetics of trapping, detrapping, and trap generation in JOURNAL OF ELECTRONIC MATERIALS
  • Journal

    TITLE

    Journal of Electronic Materials

    ISSUE

    9

    VOLUME

    22

    Author Affiliations

    Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/bf02817689

    DOI

    http://dx.doi.org/10.1007/bf02817689

    DIMENSIONS

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