Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic applications View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1990-03

AUTHORS

Alain E. Kaloyeros, Aiguo Feng, Jonathan Garhart, Kenneth C. Brooks, Sumanta K. Ghosh, Arjun N. Saxena, Fred Luehrs

ABSTRACT

Copper films for potential use in multilevel metallization in ULSIC’s were produced by low temperature (250–350° C) metal-organic chemical vapor deposition (LTMOCVD) in atmospheres of pure H2 or mixture Ar/H2 from the β-diketonate precursor bis(1,1,1,5,5,5-hexafluoroacetylacetonato) copper(ll), Cu(hfa)2. The films were analyzed by x-ray diffraction (XRD), Rutherford backscattering (RBS), Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy-dispersive x-ray spectroscopy (EDXS). The results of these studies showed that the films were uniform, continuous, adherent and highly pure—oxygen and carbon contents were below the detection limits of AES. Four point resistivity measurements showed that the copper films had very low resistivity, as low as 1.9 μΩcm for the films deposited in pure hydrogen atmosphere. Our preliminary results seem to indicate that LTMOCVD is a very attractive technique for copper multilevel metallizations. More... »

PAGES

271-276

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02733818

DOI

http://dx.doi.org/10.1007/bf02733818

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1026974227


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