Kinetics of a.c. electroluminescence in ZnS View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1970-10

AUTHORS

P. Brovetto, V. Maxia, C. Muntoni

ABSTRACT

In this paper, a lately proposed model is used to explain some features of the a.c. electroluminescence process in Cu-doped ZnS. The model is based on the properties of stacking-fault-type linear defects lying in basal planes of hexagonal crystals. Theoretical kinetic equations are deduced to represent the behaviour of the mean value of brightness waves. These equations are compared with the observed initial building-up of luminescence. Particular attention is given to the effect of temperature. It is found, through a comparison between experimental and theoretical results, that the decrease of the mean brightness at low temperature is due to the increasing width of the forbidden-energy gap inside the linear defective regions. All the observed facts appear self-consistent if compared with the model. More... »

PAGES

219-240

References to SciGraph publications

  • 1969-05. The building-up of the electroluminescence in LETTERE AL NUOVO CIMENTO (1969-1970)
  • Journal

    TITLE

    Il Nuovo Cimento B (1965-1970)

    ISSUE

    2

    VOLUME

    69

    Author Affiliations

    Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/bf02710987

    DOI

    http://dx.doi.org/10.1007/bf02710987

    DIMENSIONS

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