Magnetic resonance studies of GaN based light emitting diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1996-05

AUTHORS

W. E. Caelos, E. R. Glaser, T. A. Kennedy, S. Nakamura

ABSTRACT

We report the application of electrical detection of magnetic resonance (EDMR) and electroluminescence detection of magnetic resonance (ELDMR) to study the recombination processes in InGaN/AlGaN double heterostructure p-n junctions. These techniques are especially well suited to the problems of defects in device structures in that they are much more sensitive than conventional paramagnetic resonance and are responsive to only those defects involved in the electrooptical properties of the structure. One resonance is observed at g≈2.00 and is identified as a Zn-related acceptor trap in the InGaN layer. A second resonance with g≈1.99 is identified as a deep donor. More... »

PAGES

851-854

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02666648

DOI

http://dx.doi.org/10.1007/bf02666648

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1005818495


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