Importance of the choice of the profile model for ap-n junction in the location of deep levels View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1992-09

AUTHORS

J. A. Jimenez-Tejada, J. A. Lopez-Villanueva, P. Cartujo, J. Vicente, J. E. Carceller

ABSTRACT

The energy levels introduced by Pt in silicon have been measured in a non-abruptp+-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance. Two levels have been detected with activation energies of:Ec -ET = 0.22 eV with acceptor character andET -Ev = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor levelEc -ET = 0.34 eV was found instead of or besides a donorlike levelET -Ev = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation of the electrical behavior leads to the non-existence of the acceptor levelEc −ET = 0.34 eV located in then-side of the junction. More... »

PAGES

883-886

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02665544

DOI

http://dx.doi.org/10.1007/bf02665544

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1022011180


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