Ontology type: schema:ScholarlyArticle
1992-09
AUTHORSJ. A. Jimenez-Tejada, J. A. Lopez-Villanueva, P. Cartujo, J. Vicente, J. E. Carceller
ABSTRACTThe energy levels introduced by Pt in silicon have been measured in a non-abruptp+-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance. Two levels have been detected with activation energies of:Ec -ET = 0.22 eV with acceptor character andET -Ev = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor levelEc -ET = 0.34 eV was found instead of or besides a donorlike levelET -Ev = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation of the electrical behavior leads to the non-existence of the acceptor levelEc −ET = 0.34 eV located in then-side of the junction. More... »
PAGES883-886
http://scigraph.springernature.com/pub.10.1007/bf02665544
DOIhttp://dx.doi.org/10.1007/bf02665544
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