Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1996-07

AUTHORS

C. Carter-Coman, A. S. Brown, N. M. Jokerst, D. E. Dawson, R. Bicknell-Tassius, Z. C. Feng, K. C. Rajkumar, G. Dagnall

ABSTRACT

Compliant substrates allow a new approach to the growth of strained epitaxial layers, in which part of the strain is accommodated in the substrate. In this article, compliant substrates are discussed and a new compliant substrate technology based on bonded thin film substrates is introduced. This technology has several advantages over previously published methods, including the ability to pattern both the top and bottom of the material. A new concept enabled by this compliant substrate technology,strain-modulated epitaxy, will be introduced. Using this technique, the properties of the semiconductor material can be controlled laterally across a substrate. Results of two experiments are presented in which low composition InxGa1−xAs was grown by molecular beam epitaxy on GaAs compliant substrates at thicknesses both greater than and less than the conventional critical thickness. It was found that for t > tc, there was an inhibition of defect production in the epitaxial films grown on the compliant substrates as compared to those grown on conventional reference substrates. For t < tc, photoluminescence and x-ray diffraction show the compliant substrates to be of excellent quality and uniformity as compared to conventional substrates. More... »

PAGES

1044-1048

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02659900

DOI

http://dx.doi.org/10.1007/bf02659900

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020462159


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Georgia Institute of Technology", 
          "id": "https://www.grid.ac/institutes/grid.213917.f", 
          "name": [
            "School of Electrical and Computer Engineering, EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Carter-Coman", 
        "givenName": "C.", 
        "id": "sg:person.015332772301.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015332772301.54"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Georgia Institute of Technology", 
          "id": "https://www.grid.ac/institutes/grid.213917.f", 
          "name": [
            "School of Electrical and Computer Engineering, EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Brown", 
        "givenName": "A. S.", 
        "id": "sg:person.0756145067.28", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0756145067.28"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Georgia Institute of Technology", 
          "id": "https://www.grid.ac/institutes/grid.213917.f", 
          "name": [
            "School of Electrical and Computer Engineering, EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Jokerst", 
        "givenName": "N. M.", 
        "id": "sg:person.01145661721.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01145661721.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Georgia Institute of Technology", 
          "id": "https://www.grid.ac/institutes/grid.213917.f", 
          "name": [
            "School of Electrical and Computer Engineering, EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dawson", 
        "givenName": "D. E.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Georgia Institute of Technology", 
          "id": "https://www.grid.ac/institutes/grid.213917.f", 
          "name": [
            "School of Electrical and Computer Engineering, EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bicknell-Tassius", 
        "givenName": "R.", 
        "id": "sg:person.012274613523.76", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012274613523.76"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Georgia Institute of Technology", 
          "id": "https://www.grid.ac/institutes/grid.213917.f", 
          "name": [
            "EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Feng", 
        "givenName": "Z. C.", 
        "id": "sg:person.014427232777.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014427232777.54"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Georgia Institute of Technology", 
          "id": "https://www.grid.ac/institutes/grid.213917.f", 
          "name": [
            "School of Electrical and Computer Engineering, EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rajkumar", 
        "givenName": "K. C.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Georgia Institute of Technology", 
          "id": "https://www.grid.ac/institutes/grid.213917.f", 
          "name": [
            "School of Electrical and Computer Engineering, EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dagnall", 
        "givenName": "G.", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1063/1.102896", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057650472"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.106053", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057653622"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.107560", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057655129"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.111195", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057658754"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.337148", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057943055"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.343850", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057952078"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.98946", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058139045"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/5.219338", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061179013"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/68.118028", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061207027"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/68.91003", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061212375"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.587889", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062197936"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "1996-07", 
    "datePublishedReg": "1996-07-01", 
    "description": "Compliant substrates allow a new approach to the growth of strained epitaxial layers, in which part of the strain is accommodated in the substrate. In this article, compliant substrates are discussed and a new compliant substrate technology based on bonded thin film substrates is introduced. This technology has several advantages over previously published methods, including the ability to pattern both the top and bottom of the material. A new concept enabled by this compliant substrate technology,strain-modulated epitaxy, will be introduced. Using this technique, the properties of the semiconductor material can be controlled laterally across a substrate. Results of two experiments are presented in which low composition InxGa1\u2212xAs was grown by molecular beam epitaxy on GaAs compliant substrates at thicknesses both greater than and less than the conventional critical thickness. It was found that for t > tc, there was an inhibition of defect production in the epitaxial films grown on the compliant substrates as compared to those grown on conventional reference substrates. For t < tc, photoluminescence and x-ray diffraction show the compliant substrates to be of excellent quality and uniformity as compared to conventional substrates.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/bf02659900", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136213", 
        "issn": [
          "0361-5235", 
          "1543-186X"
        ], 
        "name": "Journal of Electronic Materials", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "25"
      }
    ], 
    "name": "Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology", 
    "pagination": "1044-1048", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "617f9532c21f84c3fabb9691dd5a643af5ed893c6e43091b7af61244614237cd"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/bf02659900"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1020462159"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/bf02659900", 
      "https://app.dimensions.ai/details/publication/pub.1020462159"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T13:36", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000370_0000000370/records_46777_00000001.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007%2FBF02659900"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/bf02659900'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/bf02659900'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/bf02659900'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/bf02659900'


 

This table displays all metadata directly associated to this object as RDF triples.

141 TRIPLES      21 PREDICATES      38 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/bf02659900 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N000688640b4c4228a4460a338c483c2a
4 schema:citation https://doi.org/10.1063/1.102896
5 https://doi.org/10.1063/1.106053
6 https://doi.org/10.1063/1.107560
7 https://doi.org/10.1063/1.111195
8 https://doi.org/10.1063/1.337148
9 https://doi.org/10.1063/1.343850
10 https://doi.org/10.1063/1.98946
11 https://doi.org/10.1109/5.219338
12 https://doi.org/10.1109/68.118028
13 https://doi.org/10.1109/68.91003
14 https://doi.org/10.1116/1.587889
15 schema:datePublished 1996-07
16 schema:datePublishedReg 1996-07-01
17 schema:description Compliant substrates allow a new approach to the growth of strained epitaxial layers, in which part of the strain is accommodated in the substrate. In this article, compliant substrates are discussed and a new compliant substrate technology based on bonded thin film substrates is introduced. This technology has several advantages over previously published methods, including the ability to pattern both the top and bottom of the material. A new concept enabled by this compliant substrate technology,strain-modulated epitaxy, will be introduced. Using this technique, the properties of the semiconductor material can be controlled laterally across a substrate. Results of two experiments are presented in which low composition InxGa1−xAs was grown by molecular beam epitaxy on GaAs compliant substrates at thicknesses both greater than and less than the conventional critical thickness. It was found that for t > tc, there was an inhibition of defect production in the epitaxial films grown on the compliant substrates as compared to those grown on conventional reference substrates. For t < tc, photoluminescence and x-ray diffraction show the compliant substrates to be of excellent quality and uniformity as compared to conventional substrates.
18 schema:genre research_article
19 schema:inLanguage en
20 schema:isAccessibleForFree false
21 schema:isPartOf N167d724cf823410ca30919de5198b5b9
22 N2b603ae75b5549febfc37633994bb8b0
23 sg:journal.1136213
24 schema:name Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology
25 schema:pagination 1044-1048
26 schema:productId N1b8a12bdc17d4e649622e9f154d14d0b
27 Neb16f03606bc44baa02ee11a44e1569b
28 Ned0f8f8a5431463d930ead0e6ac3b8ff
29 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020462159
30 https://doi.org/10.1007/bf02659900
31 schema:sdDatePublished 2019-04-11T13:36
32 schema:sdLicense https://scigraph.springernature.com/explorer/license/
33 schema:sdPublisher Na67d2a50b39145ae925e17aa7c8201fc
34 schema:url http://link.springer.com/10.1007%2FBF02659900
35 sgo:license sg:explorer/license/
36 sgo:sdDataset articles
37 rdf:type schema:ScholarlyArticle
38 N000688640b4c4228a4460a338c483c2a rdf:first sg:person.015332772301.54
39 rdf:rest N7ea2cd0e7acf4c9ba27b6a0332ff2495
40 N00c28523a2e14e6d8f3a3763802e9775 schema:affiliation https://www.grid.ac/institutes/grid.213917.f
41 schema:familyName Rajkumar
42 schema:givenName K. C.
43 rdf:type schema:Person
44 N14a5e77e15dd426195fb36e10f4c87f6 schema:affiliation https://www.grid.ac/institutes/grid.213917.f
45 schema:familyName Dawson
46 schema:givenName D. E.
47 rdf:type schema:Person
48 N167d724cf823410ca30919de5198b5b9 schema:issueNumber 7
49 rdf:type schema:PublicationIssue
50 N1b8a12bdc17d4e649622e9f154d14d0b schema:name readcube_id
51 schema:value 617f9532c21f84c3fabb9691dd5a643af5ed893c6e43091b7af61244614237cd
52 rdf:type schema:PropertyValue
53 N22ce57f228ee4d0797837b5495984b8b rdf:first N14a5e77e15dd426195fb36e10f4c87f6
54 rdf:rest N5f51becdc80c4295a53c12788d09085f
55 N260385a8611a4d2489fc674f6b8fe129 rdf:first N00c28523a2e14e6d8f3a3763802e9775
56 rdf:rest Ne2a679ef975c41aeafacf04eeb6b55d8
57 N2b603ae75b5549febfc37633994bb8b0 schema:volumeNumber 25
58 rdf:type schema:PublicationVolume
59 N42393826728c4b22936d8413feb51393 rdf:first sg:person.01145661721.17
60 rdf:rest N22ce57f228ee4d0797837b5495984b8b
61 N5f51becdc80c4295a53c12788d09085f rdf:first sg:person.012274613523.76
62 rdf:rest N7d1d9d792bc245aeb16747a163eabce4
63 N7d1d9d792bc245aeb16747a163eabce4 rdf:first sg:person.014427232777.54
64 rdf:rest N260385a8611a4d2489fc674f6b8fe129
65 N7ea2cd0e7acf4c9ba27b6a0332ff2495 rdf:first sg:person.0756145067.28
66 rdf:rest N42393826728c4b22936d8413feb51393
67 Na67d2a50b39145ae925e17aa7c8201fc schema:name Springer Nature - SN SciGraph project
68 rdf:type schema:Organization
69 Ndbb507bbe47d487cb9e5cbaaec65f169 schema:affiliation https://www.grid.ac/institutes/grid.213917.f
70 schema:familyName Dagnall
71 schema:givenName G.
72 rdf:type schema:Person
73 Ne2a679ef975c41aeafacf04eeb6b55d8 rdf:first Ndbb507bbe47d487cb9e5cbaaec65f169
74 rdf:rest rdf:nil
75 Neb16f03606bc44baa02ee11a44e1569b schema:name dimensions_id
76 schema:value pub.1020462159
77 rdf:type schema:PropertyValue
78 Ned0f8f8a5431463d930ead0e6ac3b8ff schema:name doi
79 schema:value 10.1007/bf02659900
80 rdf:type schema:PropertyValue
81 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
82 schema:name Engineering
83 rdf:type schema:DefinedTerm
84 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
85 schema:name Materials Engineering
86 rdf:type schema:DefinedTerm
87 sg:journal.1136213 schema:issn 0361-5235
88 1543-186X
89 schema:name Journal of Electronic Materials
90 rdf:type schema:Periodical
91 sg:person.01145661721.17 schema:affiliation https://www.grid.ac/institutes/grid.213917.f
92 schema:familyName Jokerst
93 schema:givenName N. M.
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01145661721.17
95 rdf:type schema:Person
96 sg:person.012274613523.76 schema:affiliation https://www.grid.ac/institutes/grid.213917.f
97 schema:familyName Bicknell-Tassius
98 schema:givenName R.
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012274613523.76
100 rdf:type schema:Person
101 sg:person.014427232777.54 schema:affiliation https://www.grid.ac/institutes/grid.213917.f
102 schema:familyName Feng
103 schema:givenName Z. C.
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014427232777.54
105 rdf:type schema:Person
106 sg:person.015332772301.54 schema:affiliation https://www.grid.ac/institutes/grid.213917.f
107 schema:familyName Carter-Coman
108 schema:givenName C.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015332772301.54
110 rdf:type schema:Person
111 sg:person.0756145067.28 schema:affiliation https://www.grid.ac/institutes/grid.213917.f
112 schema:familyName Brown
113 schema:givenName A. S.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0756145067.28
115 rdf:type schema:Person
116 https://doi.org/10.1063/1.102896 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057650472
117 rdf:type schema:CreativeWork
118 https://doi.org/10.1063/1.106053 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057653622
119 rdf:type schema:CreativeWork
120 https://doi.org/10.1063/1.107560 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057655129
121 rdf:type schema:CreativeWork
122 https://doi.org/10.1063/1.111195 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057658754
123 rdf:type schema:CreativeWork
124 https://doi.org/10.1063/1.337148 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057943055
125 rdf:type schema:CreativeWork
126 https://doi.org/10.1063/1.343850 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057952078
127 rdf:type schema:CreativeWork
128 https://doi.org/10.1063/1.98946 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058139045
129 rdf:type schema:CreativeWork
130 https://doi.org/10.1109/5.219338 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061179013
131 rdf:type schema:CreativeWork
132 https://doi.org/10.1109/68.118028 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061207027
133 rdf:type schema:CreativeWork
134 https://doi.org/10.1109/68.91003 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061212375
135 rdf:type schema:CreativeWork
136 https://doi.org/10.1116/1.587889 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062197936
137 rdf:type schema:CreativeWork
138 https://www.grid.ac/institutes/grid.213917.f schema:alternateName Georgia Institute of Technology
139 schema:name EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA
140 School of Electrical and Computer Engineering, EOEML, Georgia Tech Research Institute, Georgia Institute of Technology, 791 Atlantic Dr. NW MC0269, 30332-0269, Atlanta, GA
141 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...