Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1990-05

AUTHORS

F. A. Baiocchi, T. Ambrose, R. O. Miller, S. Nakahara, J. M. Brown, C. L. Reynolds, S. E. Lengle, L. J. Peticolas

ABSTRACT

The Rutherford Backscattering (RBS) technique has been optimized for the measurement of thin (>85Å) alternating layers of A1(x)Ga(l-x)As and GaAs, which are at the limit of resolution of standard RBS measurements. RBS analysis of these structures provides both layer thicknesses and Al content. This information is useful for device processing since the layer thicknesses impact the FET threshold voltage and the Al content is important for proper selective chemical etching. Experimental conditions for the beam energy, detection angle, and sample rotation have been determined which allow measurement of the layer thicknesses to a precision of ±20-30Å (for layers >85A) and of the Al content,x, to a precision of ±.02. Comparison of the RBS data with Transmission Electron Microscopy (TEM), Cathodoluminescence (CL), and Reflection High Energy Electron Diffraction (RHEED) measurements on the same material showed very good agreement between the different techniques. The advantage of RBS is that it can measure much thinner layers than CL and it provides thickness and composition information at the same time whereas TEM only provides thickness for this particular material. RBS is currently used tocharacterize a monitor wafer from each day’s run to provide a processing baseline for the MBE growth. More... »

PAGES

413-418

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02657999

DOI

http://dx.doi.org/10.1007/bf02657999

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1011935607


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Alcatel-Lucent (United States)", 
          "id": "https://www.grid.ac/institutes/grid.421036.2", 
          "name": [
            "AT&T Bell Laboratories, 07974, Murray Hill, NJ"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Baiocchi", 
        "givenName": "F. A.", 
        "id": "sg:person.015253052701.55", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015253052701.55"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Alcatel-Lucent (United States)", 
          "id": "https://www.grid.ac/institutes/grid.421036.2", 
          "name": [
            "AT&T Bell Laboratories, 07974, Murray Hill, NJ"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ambrose", 
        "givenName": "T.", 
        "id": "sg:person.016245275157.25", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016245275157.25"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Alcatel-Lucent (United States)", 
          "id": "https://www.grid.ac/institutes/grid.421036.2", 
          "name": [
            "AT&T Bell Laboratories, 07974, Murray Hill, NJ"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Miller", 
        "givenName": "R. O.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Alcatel-Lucent (United States)", 
          "id": "https://www.grid.ac/institutes/grid.421036.2", 
          "name": [
            "AT&T Bell Laboratories, 07974, Murray Hill, NJ"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nakahara", 
        "givenName": "S.", 
        "id": "sg:person.016430070615.28", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016430070615.28"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Alcatel-Lucent (United States)", 
          "id": "https://www.grid.ac/institutes/grid.421036.2", 
          "name": [
            "AT&T Bell Laboratories, 07974, Murray Hill, NJ"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Brown", 
        "givenName": "J. M.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nokia (United States)", 
          "id": "https://www.grid.ac/institutes/grid.469490.6", 
          "name": [
            "AT&T Bell Laboratories, 19604, Reading, PA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Reynolds", 
        "givenName": "C. L.", 
        "id": "sg:person.0607207430.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0607207430.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nokia (United States)", 
          "id": "https://www.grid.ac/institutes/grid.469490.6", 
          "name": [
            "AT&T Bell Laboratories, 19604, Reading, PA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lengle", 
        "givenName": "S. E.", 
        "id": "sg:person.016313410357.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016313410357.37"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nokia (United States)", 
          "id": "https://www.grid.ac/institutes/grid.469490.6", 
          "name": [
            "AT&T Bell Laboratories, 19604, Reading, PA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Peticolas", 
        "givenName": "L. J.", 
        "id": "sg:person.012724663371.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012724663371.88"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1002/j.1538-7305.1989.tb00647.x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009534256"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0168-583x(87)80220-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1018935172"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-1-4615-8876-4_31", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020742232", 
          "https://doi.org/10.1007/978-1-4615-8876-4_31"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf02660342", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021274989", 
          "https://doi.org/10.1007/bf02660342"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf02660342", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021274989", 
          "https://doi.org/10.1007/bf02660342"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/j.1538-7305.1989.tb00643.x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023782713"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0167-577x(85)90147-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026332184"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0167-577x(85)90147-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026332184"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-1-4615-8876-4_32", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041479179", 
          "https://doi.org/10.1007/978-1-4615-8876-4_32"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1117/12.939306", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052176390"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1662558", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057740895"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/jqe.1986.1073162", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061305507"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "1990-05", 
    "datePublishedReg": "1990-05-01", 
    "description": "The Rutherford Backscattering (RBS) technique has been optimized for the measurement of thin (>85\u00c5) alternating layers of A1(x)Ga(l-x)As and GaAs, which are at the limit of resolution of standard RBS measurements. RBS analysis of these structures provides both layer thicknesses and Al content. This information is useful for device processing since the layer thicknesses impact the FET threshold voltage and the Al content is important for proper selective chemical etching. Experimental conditions for the beam energy, detection angle, and sample rotation have been determined which allow measurement of the layer thicknesses to a precision of \u00b120-30\u00c5 (for layers >85A) and of the Al content,x, to a precision of \u00b1.02. Comparison of the RBS data with Transmission Electron Microscopy (TEM), Cathodoluminescence (CL), and Reflection High Energy Electron Diffraction (RHEED) measurements on the same material showed very good agreement between the different techniques. The advantage of RBS is that it can measure much thinner layers than CL and it provides thickness and composition information at the same time whereas TEM only provides thickness for this particular material. RBS is currently used tocharacterize a monitor wafer from each day\u2019s run to provide a processing baseline for the MBE growth.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/bf02657999", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136213", 
        "issn": [
          "0361-5235", 
          "1543-186X"
        ], 
        "name": "Journal of Electronic Materials", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "19"
      }
    ], 
    "name": "Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering", 
    "pagination": "413-418", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "38de238ca8f0b9cd1b7549f248e81b5de42f0d386e3eac19a20bc84de78bab4e"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/bf02657999"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1011935607"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/bf02657999", 
      "https://app.dimensions.ai/details/publication/pub.1011935607"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T13:28", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000370_0000000370/records_46741_00000000.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007%2FBF02657999"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

144 TRIPLES      21 PREDICATES      37 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/bf02657999 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author N8dd0247ca70146ffb88f2d3f1ee43364
4 schema:citation sg:pub.10.1007/978-1-4615-8876-4_31
5 sg:pub.10.1007/978-1-4615-8876-4_32
6 sg:pub.10.1007/bf02660342
7 https://doi.org/10.1002/j.1538-7305.1989.tb00643.x
8 https://doi.org/10.1002/j.1538-7305.1989.tb00647.x
9 https://doi.org/10.1016/0167-577x(85)90147-8
10 https://doi.org/10.1016/s0168-583x(87)80220-3
11 https://doi.org/10.1063/1.1662558
12 https://doi.org/10.1109/jqe.1986.1073162
13 https://doi.org/10.1117/12.939306
14 schema:datePublished 1990-05
15 schema:datePublishedReg 1990-05-01
16 schema:description The Rutherford Backscattering (RBS) technique has been optimized for the measurement of thin (>85Å) alternating layers of A1(x)Ga(l-x)As and GaAs, which are at the limit of resolution of standard RBS measurements. RBS analysis of these structures provides both layer thicknesses and Al content. This information is useful for device processing since the layer thicknesses impact the FET threshold voltage and the Al content is important for proper selective chemical etching. Experimental conditions for the beam energy, detection angle, and sample rotation have been determined which allow measurement of the layer thicknesses to a precision of ±20-30Å (for layers >85A) and of the Al content,x, to a precision of ±.02. Comparison of the RBS data with Transmission Electron Microscopy (TEM), Cathodoluminescence (CL), and Reflection High Energy Electron Diffraction (RHEED) measurements on the same material showed very good agreement between the different techniques. The advantage of RBS is that it can measure much thinner layers than CL and it provides thickness and composition information at the same time whereas TEM only provides thickness for this particular material. RBS is currently used tocharacterize a monitor wafer from each day’s run to provide a processing baseline for the MBE growth.
17 schema:genre research_article
18 schema:inLanguage en
19 schema:isAccessibleForFree false
20 schema:isPartOf N60268a715a0248738080ebd78c8069d7
21 Ndfccba7689e6427fb2577c5fabbc3129
22 sg:journal.1136213
23 schema:name Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering
24 schema:pagination 413-418
25 schema:productId N6e0eb09e125542b4bfdd5555e7f74f16
26 Nc6b80407524048628401a613db9e39e8
27 Nd8b1631dce87463aa1b88b3d9869b442
28 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011935607
29 https://doi.org/10.1007/bf02657999
30 schema:sdDatePublished 2019-04-11T13:28
31 schema:sdLicense https://scigraph.springernature.com/explorer/license/
32 schema:sdPublisher N14439c3df95e459c98619f095d67055f
33 schema:url http://link.springer.com/10.1007%2FBF02657999
34 sgo:license sg:explorer/license/
35 sgo:sdDataset articles
36 rdf:type schema:ScholarlyArticle
37 N14439c3df95e459c98619f095d67055f schema:name Springer Nature - SN SciGraph project
38 rdf:type schema:Organization
39 N60268a715a0248738080ebd78c8069d7 schema:issueNumber 5
40 rdf:type schema:PublicationIssue
41 N6e0eb09e125542b4bfdd5555e7f74f16 schema:name readcube_id
42 schema:value 38de238ca8f0b9cd1b7549f248e81b5de42f0d386e3eac19a20bc84de78bab4e
43 rdf:type schema:PropertyValue
44 N805a3f6affb9450082661a228a61f84e schema:affiliation https://www.grid.ac/institutes/grid.421036.2
45 schema:familyName Brown
46 schema:givenName J. M.
47 rdf:type schema:Person
48 N8c860c59869d4c03ba40922f1b289db7 rdf:first Nf7d8ae9ab9c84c36b4d297928a3dfddc
49 rdf:rest Na4a7f344a5194244aa6aa1899ca6d496
50 N8dd0247ca70146ffb88f2d3f1ee43364 rdf:first sg:person.015253052701.55
51 rdf:rest Nf940045f8b874814b0254ef4b1b99fe1
52 N912d4b94ad624942826539ceb42d90f0 rdf:first sg:person.0607207430.09
53 rdf:rest Nbbe17a26c854471099211e9b68960f84
54 N9b9dc6396a444dabb5d7129916665785 rdf:first N805a3f6affb9450082661a228a61f84e
55 rdf:rest N912d4b94ad624942826539ceb42d90f0
56 Na4a7f344a5194244aa6aa1899ca6d496 rdf:first sg:person.016430070615.28
57 rdf:rest N9b9dc6396a444dabb5d7129916665785
58 Nbbe17a26c854471099211e9b68960f84 rdf:first sg:person.016313410357.37
59 rdf:rest Nf51748a1e0284adf93796c19ef0dc286
60 Nc6b80407524048628401a613db9e39e8 schema:name dimensions_id
61 schema:value pub.1011935607
62 rdf:type schema:PropertyValue
63 Nd8b1631dce87463aa1b88b3d9869b442 schema:name doi
64 schema:value 10.1007/bf02657999
65 rdf:type schema:PropertyValue
66 Ndfccba7689e6427fb2577c5fabbc3129 schema:volumeNumber 19
67 rdf:type schema:PublicationVolume
68 Nf51748a1e0284adf93796c19ef0dc286 rdf:first sg:person.012724663371.88
69 rdf:rest rdf:nil
70 Nf7d8ae9ab9c84c36b4d297928a3dfddc schema:affiliation https://www.grid.ac/institutes/grid.421036.2
71 schema:familyName Miller
72 schema:givenName R. O.
73 rdf:type schema:Person
74 Nf940045f8b874814b0254ef4b1b99fe1 rdf:first sg:person.016245275157.25
75 rdf:rest N8c860c59869d4c03ba40922f1b289db7
76 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
77 schema:name Physical Sciences
78 rdf:type schema:DefinedTerm
79 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
80 schema:name Other Physical Sciences
81 rdf:type schema:DefinedTerm
82 sg:journal.1136213 schema:issn 0361-5235
83 1543-186X
84 schema:name Journal of Electronic Materials
85 rdf:type schema:Periodical
86 sg:person.012724663371.88 schema:affiliation https://www.grid.ac/institutes/grid.469490.6
87 schema:familyName Peticolas
88 schema:givenName L. J.
89 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012724663371.88
90 rdf:type schema:Person
91 sg:person.015253052701.55 schema:affiliation https://www.grid.ac/institutes/grid.421036.2
92 schema:familyName Baiocchi
93 schema:givenName F. A.
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015253052701.55
95 rdf:type schema:Person
96 sg:person.016245275157.25 schema:affiliation https://www.grid.ac/institutes/grid.421036.2
97 schema:familyName Ambrose
98 schema:givenName T.
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016245275157.25
100 rdf:type schema:Person
101 sg:person.016313410357.37 schema:affiliation https://www.grid.ac/institutes/grid.469490.6
102 schema:familyName Lengle
103 schema:givenName S. E.
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016313410357.37
105 rdf:type schema:Person
106 sg:person.016430070615.28 schema:affiliation https://www.grid.ac/institutes/grid.421036.2
107 schema:familyName Nakahara
108 schema:givenName S.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016430070615.28
110 rdf:type schema:Person
111 sg:person.0607207430.09 schema:affiliation https://www.grid.ac/institutes/grid.469490.6
112 schema:familyName Reynolds
113 schema:givenName C. L.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0607207430.09
115 rdf:type schema:Person
116 sg:pub.10.1007/978-1-4615-8876-4_31 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020742232
117 https://doi.org/10.1007/978-1-4615-8876-4_31
118 rdf:type schema:CreativeWork
119 sg:pub.10.1007/978-1-4615-8876-4_32 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041479179
120 https://doi.org/10.1007/978-1-4615-8876-4_32
121 rdf:type schema:CreativeWork
122 sg:pub.10.1007/bf02660342 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021274989
123 https://doi.org/10.1007/bf02660342
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1002/j.1538-7305.1989.tb00643.x schema:sameAs https://app.dimensions.ai/details/publication/pub.1023782713
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1002/j.1538-7305.1989.tb00647.x schema:sameAs https://app.dimensions.ai/details/publication/pub.1009534256
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1016/0167-577x(85)90147-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026332184
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1016/s0168-583x(87)80220-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1018935172
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1063/1.1662558 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057740895
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1109/jqe.1986.1073162 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061305507
136 rdf:type schema:CreativeWork
137 https://doi.org/10.1117/12.939306 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052176390
138 rdf:type schema:CreativeWork
139 https://www.grid.ac/institutes/grid.421036.2 schema:alternateName Alcatel-Lucent (United States)
140 schema:name AT&T Bell Laboratories, 07974, Murray Hill, NJ
141 rdf:type schema:Organization
142 https://www.grid.ac/institutes/grid.469490.6 schema:alternateName Nokia (United States)
143 schema:name AT&T Bell Laboratories, 19604, Reading, PA
144 rdf:type schema:Organization
 




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