In-situ spectroscopic ellipsometry of HgCdTe View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1996-08

AUTHORS

J. D. Benson, A. B. Cornfeld, M. Martinka, K. M. Singley, Z. Derzko, P. J. Shorten, J. H. Dinan, P. R. Boyd, F. C. Wolfgram, B. Johs, P. He, John A. Woollam

ABSTRACT

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process. More... »

PAGES

1406-1410

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02655042

DOI

http://dx.doi.org/10.1007/bf02655042

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045542006


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