Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1993-12

AUTHORS

A. Giordana, O. J. Glembocki, E. R. Glaser, D. K. Gaskill, C. S. Kyono, M. E. Twigg, M. Fatemi, B. Tadayon, S. Tadayon

ABSTRACT

The results from an in-depth characterization of as-grown and annealed low-temperature GaAs layers deposited at less than 260°C are presented. The layers, amorphous as grown, became crystalline after annealing. The crystallization was documented by several characterization techniques including photoreflectance, Raman spectroscopy, photoluminescence, transmission electron microscopy, and double-crystal x-ray diffraction. The n-type conductivity of the annealed films was exploited for the construction of a diode structure. More... »

PAGES

1391-1393

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02649983

DOI

http://dx.doi.org/10.1007/bf02649983

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1039840592


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