Test of the localization scaling relation in two dimensions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1996-05

AUTHORS

F. W. Van Keuls, X. L. Hu, H. Mathur, H. W. Jiang, A. J. Dahm

ABSTRACT

Experimental data on localization in two-dimensional GaAs/AlGaAs heterostructures are compared with the scaling theory of localization. All states are found to be localized at T=0 and B=0 in contrast to recent reports of a metalto-insulator transition in a Si MOSFET sample. Qualitative agreement with the predicted scaling of the localization length with the elastic scattering length is found at B=0. More... »

PAGES

2531-2532

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02570252

DOI

http://dx.doi.org/10.1007/bf02570252

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1036088259


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