Non-universal scaling of ρxx peak widths of gated GaAs/AlGaAs in the IQHE regime View Full Text


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Article Info

DATE

1996-05

AUTHORS

F. W. Van Keuls, H. W. Jiang, A. J. Dahm

ABSTRACT

A systematic study of the halfwidths of the ρxx peaks, ΔB(T), and (∂ρxy/∂B)max as a function of electron density, or equivalently, disorder, has been undertaken. Our samples are low mobility, gated GaAs/Al0.3Ga0.7As heterostructures (HS). Scaling arguments predict the linewidths of ρxx peaks in the IQHE to vary as ΔB∼Tκ, where κ is universal. We find that κ decreases with increasing Landau level number, is a function of disorder and is sample dependent. We investigate peaks 0↓, 1↑, 1↓, and unsplit peaks 1–4 at densities in the range 2–6×1011 cm−2 For the 1↑ peak, κ is 0.6 at high densities. Values of κ range from 0.15 to 0.4 for unsplit peaks These results differ from reported κ=0.42 for InGaAs/InP HS and some GaAs/AlGaAs HS below 200 mK. More... »

PAGES

2467-2468

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02570220

DOI

http://dx.doi.org/10.1007/bf02570220

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044546272


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