Etching of diamond octahedrons at high temperatures and pressure with controlled oxygen partial pressure View Full Text


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Article Info

DATE

1980-02

AUTHORS

S. Yamaoka, H. Kanda, N. Setaka

ABSTRACT

Etching of a natural diamond octahedron was carried out at temperatures of 800 to 1400° C and at pressures of 15 and 40 kbar under controlled oxygen partial pressure in the range 10−17 to 104 atm by use of oxygen buffers. Well-defined etch pits of equiangular triangule outline were formed. When the results were plotted based on logPO2 versus 1/T, reversal of the pit orientation clearly occurred on a boundary curve expressed by an equation, logPO2=−9.0×104/T+63, wherePO2 (atm) andT (K) are oxygen partial pressure and temperature, respectively. Etch pits with the same orientation as an octahedral face were produced in a low temperature and highPO2 region, and those with the opposite orientation, i.e. the same as for natural “trigon”, were produced in the other region. More... »

PAGES

332-336

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf02396780

DOI

http://dx.doi.org/10.1007/bf02396780

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021325558


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