Bistability and nonequilibrium phase transitions in a semiconductor recombination model with impact ionization of donors View Full Text


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Article Info

DATE

1982-03

AUTHORS

E. Schöll

ABSTRACT

A model for a recombination instability in a semiconductor far from equilibrium is analysed. It is based upon the simultaneous impact ionization of ground state and excited donors at low temperature. The number and the stability of spatially homogeneous steady states and their dependence upon external control parameters is investigated. For certain values of these parameters bistability andS-shaped current-voltage characteristics are found. Nonequilibrium phase transitions of first order between low and high conductivity states can be induced by varying the applied voltage. If certain generation coefficients are negligible, the transition changes from first to second order above some “tricritical” value of the other parameters. More... »

PAGES

23-30

References to SciGraph publications

  • 1977. Synergetics, An Introduction Nonequilibrium Phase Transitions and Self- Organization in Physics, Chemistry and Biology in NONE
  • 1972-04. Chemical reaction models for non-equilibrium phase transitions in ZEITSCHRIFT FÜR PHYSIK A HADRONS AND NUCLEI
  • 1978-12. Laser with saturable absorbers and tricritical phenomena in ZEITSCHRIFT FÜR PHYSIK B CONDENSED MATTER
  • 1981-07. Negative FIR-photoconductivity in n-GaAs in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
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    http://scigraph.springernature.com/pub.10.1007/bf01640349

    DOI

    http://dx.doi.org/10.1007/bf01640349

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