Ontology type: schema:ScholarlyArticle
1985-04
AUTHORSV. Hnatowicz, J. Kvítek, R. Džmuráň, F. Nový, J. Hoffmann, V. Odžajev, V. Rybka, P. Onheiser, H. Jelínková
ABSTRACTThe present resulte are in general agreement with those obtained earlier, e.g. in /2/. The complete removal of post-implantation defects in As-implanted Si may be achieved by thermal annealing at temperatures above 700°C and by laser annealing as well. More than 50% of the implanted As atoms enter the host lattice sites during the thermal annealing. By laser annealing, on the other hand, 9056 of the As atoms become substitutional. More... »
PAGES465-468
http://scigraph.springernature.com/pub.10.1007/bf01604491
DOIhttp://dx.doi.org/10.1007/bf01604491
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