Channeling measurement of residual damage in silicon View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1985-04

AUTHORS

V. Hnatowicz, J. Kvítek, R. Džmuráň, F. Nový, J. Hoffmann, V. Odžajev, V. Rybka, P. Onheiser, H. Jelínková

ABSTRACT

The present resulte are in general agreement with those obtained earlier, e.g. in /2/. The complete removal of post-implantation defects in As-implanted Si may be achieved by thermal annealing at temperatures above 700°C and by laser annealing as well. More than 50% of the implanted As atoms enter the host lattice sites during the thermal annealing. By laser annealing, on the other hand, 9056 of the As atoms become substitutional. More... »

PAGES

465-468

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf01604491

DOI

http://dx.doi.org/10.1007/bf01604491

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020980089


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