Laser annealing of GaAs dual implanted with Si and P ions View Full Text


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Article Info

DATE

1987-08

AUTHORS

V. Rybka, V. Odzhayev, J. Červená, V. Hnatowicz, J. Kvítek, H. Jelínková

ABSTRACT

Laser annealing of SI(100) GaAs:Cr implanted either with Si+ ions (150 keV, 6×1013-1×1015cm−2) or dual implanted with Si+ ions (150 keV, 6×1014−1×1015cm−2) and P+ ions (160 keV, 1×1014−1×1015cm−2) has been examined using backscatteringchannelling technique and via electrical measurement of Hall effect. It has been found that at laser energy densities ≧0·8 J cm−2 a full recovery of the sample surface occurs. In dual implanted samples (1×1015 Si+ cm−2+1×1015P+cm−2) up to 46% of Si atoms become electrically active after the laser annealing. Resultant Hall mobility of carriers is, however,lower than that obtained after common thermal annealing. More... »

PAGES

919-923

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf01596990

DOI

http://dx.doi.org/10.1007/bf01596990

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1050722734


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