Carrier scattering mechanisms in manganese-doped gallium antimonide View Full Text


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Article Info

DATE

1992-01

AUTHORS

N. L. Bazhenov, E. I. Georgitsé, L. M. Gutsulyak, R. I. Koshkodan, V. A. Smirnov

ABSTRACT

The results are given of an investigation of the galvanomagnetic properties of manganese-doped gallium antimonide in the interval of temperatures 4.2–300°K and in magnetic fields up to 1.5 T. The manganese was introduced into the melt during zone melting in concentrations in the range 0.005–1 at.%. The samples possessed p-type conduction. It was shown that manganese forms in gallium antimonide a shallow acceptor level with ionization energy 16 ± 3 meV. The cluster mechanism makes a significant contribution to the carrier scattering in the considered temperature range. The parameters of this scattering mechanism were determined. It was shown that with increasing concentration of manganese in the sample the contribution to the mobility of the mechanism of carrier scattering by space-charge regions increases. More... »

PAGES

42-46

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf01324983

DOI

http://dx.doi.org/10.1007/bf01324983

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1010707498


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Tiraspol' Pedagogical Institute, USSR", 
          "id": "http://www.grid.ac/institutes/grid.440628.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, USSR Academy of Sciences, USSR", 
            "Tiraspol' Pedagogical Institute, USSR"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bazhenov", 
        "givenName": "N. L.", 
        "id": "sg:person.016342426307.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016342426307.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tiraspol' Pedagogical Institute, USSR", 
          "id": "http://www.grid.ac/institutes/grid.440628.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, USSR Academy of Sciences, USSR", 
            "Tiraspol' Pedagogical Institute, USSR"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Georgits\u00e9", 
        "givenName": "E. I.", 
        "id": "sg:person.011514317211.38", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011514317211.38"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tiraspol' Pedagogical Institute, USSR", 
          "id": "http://www.grid.ac/institutes/grid.440628.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, USSR Academy of Sciences, USSR", 
            "Tiraspol' Pedagogical Institute, USSR"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gutsulyak", 
        "givenName": "L. M.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tiraspol' Pedagogical Institute, USSR", 
          "id": "http://www.grid.ac/institutes/grid.440628.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, USSR Academy of Sciences, USSR", 
            "Tiraspol' Pedagogical Institute, USSR"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Koshkodan", 
        "givenName": "R. I.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tiraspol' Pedagogical Institute, USSR", 
          "id": "http://www.grid.ac/institutes/grid.440628.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, USSR Academy of Sciences, USSR", 
            "Tiraspol' Pedagogical Institute, USSR"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Smirnov", 
        "givenName": "V. A.", 
        "id": "sg:person.014304513617.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014304513617.23"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1992-01", 
    "datePublishedReg": "1992-01-01", 
    "description": "The results are given of an investigation of the galvanomagnetic properties of manganese-doped gallium antimonide in the interval of temperatures 4.2\u2013300\u00b0K and in magnetic fields up to 1.5 T. The manganese was introduced into the melt during zone melting in concentrations in the range 0.005\u20131 at.%. The samples possessed p-type conduction. It was shown that manganese forms in gallium antimonide a shallow acceptor level with ionization energy 16 \u00b1 3 meV. The cluster mechanism makes a significant contribution to the carrier scattering in the considered temperature range. The parameters of this scattering mechanism were determined. It was shown that with increasing concentration of manganese in the sample the contribution to the mobility of the mechanism of carrier scattering by space-charge regions increases.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/bf01324983", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1313824", 
        "issn": [
          "1064-8887", 
          "1573-9228"
        ], 
        "name": "Russian Physics Journal", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "35"
      }
    ], 
    "keywords": [
      "gallium antimonide", 
      "mechanism of carrier", 
      "magnetic field", 
      "scattering mechanism", 
      "shallow acceptor level", 
      "type conduction", 
      "galvanomagnetic properties", 
      "temperatures 4.2", 
      "antimonide", 
      "acceptor level", 
      "cluster mechanism", 
      "temperature range", 
      "region increases", 
      "carriers", 
      "field", 
      "zone melting", 
      "significant contribution", 
      "conduction", 
      "contribution", 
      "properties", 
      "concentration of manganese", 
      "range", 
      "mobility", 
      "samples", 
      "parameters", 
      "mechanism", 
      "manganese", 
      "melting", 
      "investigation", 
      "results", 
      "concentration", 
      "melt", 
      "increase", 
      "form", 
      "levels", 
      "intervals", 
      "manganese form"
    ], 
    "name": "Carrier scattering mechanisms in manganese-doped gallium antimonide", 
    "pagination": "42-46", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1010707498"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/bf01324983"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/bf01324983", 
      "https://app.dimensions.ai/details/publication/pub.1010707498"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-10T09:45", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_235.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/bf01324983"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

122 TRIPLES      21 PREDICATES      63 URIs      55 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/bf01324983 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N616b2e2a6c1a4004b4db512c4d2d5ce7
4 schema:datePublished 1992-01
5 schema:datePublishedReg 1992-01-01
6 schema:description The results are given of an investigation of the galvanomagnetic properties of manganese-doped gallium antimonide in the interval of temperatures 4.2–300°K and in magnetic fields up to 1.5 T. The manganese was introduced into the melt during zone melting in concentrations in the range 0.005–1 at.%. The samples possessed p-type conduction. It was shown that manganese forms in gallium antimonide a shallow acceptor level with ionization energy 16 ± 3 meV. The cluster mechanism makes a significant contribution to the carrier scattering in the considered temperature range. The parameters of this scattering mechanism were determined. It was shown that with increasing concentration of manganese in the sample the contribution to the mobility of the mechanism of carrier scattering by space-charge regions increases.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf Nb39faa1d605149d1a031f3aaf8b64dac
11 Ndb5d794a522b4cbabf1b352c78fce6cf
12 sg:journal.1313824
13 schema:keywords acceptor level
14 antimonide
15 carriers
16 cluster mechanism
17 concentration
18 concentration of manganese
19 conduction
20 contribution
21 field
22 form
23 gallium antimonide
24 galvanomagnetic properties
25 increase
26 intervals
27 investigation
28 levels
29 magnetic field
30 manganese
31 manganese form
32 mechanism
33 mechanism of carrier
34 melt
35 melting
36 mobility
37 parameters
38 properties
39 range
40 region increases
41 results
42 samples
43 scattering mechanism
44 shallow acceptor level
45 significant contribution
46 temperature range
47 temperatures 4.2
48 type conduction
49 zone melting
50 schema:name Carrier scattering mechanisms in manganese-doped gallium antimonide
51 schema:pagination 42-46
52 schema:productId Naa59714deb2f4ccbb247271ee3a262fe
53 Nb909c0eb02384a998ef4ac8c2c99d746
54 schema:sameAs https://app.dimensions.ai/details/publication/pub.1010707498
55 https://doi.org/10.1007/bf01324983
56 schema:sdDatePublished 2022-05-10T09:45
57 schema:sdLicense https://scigraph.springernature.com/explorer/license/
58 schema:sdPublisher N563a25a721c246a697e1f6b211658342
59 schema:url https://doi.org/10.1007/bf01324983
60 sgo:license sg:explorer/license/
61 sgo:sdDataset articles
62 rdf:type schema:ScholarlyArticle
63 N1207de5a890d406dba47a47ce19877d8 schema:affiliation grid-institutes:grid.440628.c
64 schema:familyName Gutsulyak
65 schema:givenName L. M.
66 rdf:type schema:Person
67 N3e32dedfc25547a1b7c8f4a8e42624e7 schema:affiliation grid-institutes:grid.440628.c
68 schema:familyName Koshkodan
69 schema:givenName R. I.
70 rdf:type schema:Person
71 N3e68d72bbe8b45e3a25be0757749aecf rdf:first N1207de5a890d406dba47a47ce19877d8
72 rdf:rest N46d55f7c1f0f4254998111dc48e1ccbe
73 N46d55f7c1f0f4254998111dc48e1ccbe rdf:first N3e32dedfc25547a1b7c8f4a8e42624e7
74 rdf:rest N5bae0f6a7981455da3b96cb15683a1c8
75 N563a25a721c246a697e1f6b211658342 schema:name Springer Nature - SN SciGraph project
76 rdf:type schema:Organization
77 N5bae0f6a7981455da3b96cb15683a1c8 rdf:first sg:person.014304513617.23
78 rdf:rest rdf:nil
79 N613029776dc34d8a8ac5a44328247144 rdf:first sg:person.011514317211.38
80 rdf:rest N3e68d72bbe8b45e3a25be0757749aecf
81 N616b2e2a6c1a4004b4db512c4d2d5ce7 rdf:first sg:person.016342426307.11
82 rdf:rest N613029776dc34d8a8ac5a44328247144
83 Naa59714deb2f4ccbb247271ee3a262fe schema:name doi
84 schema:value 10.1007/bf01324983
85 rdf:type schema:PropertyValue
86 Nb39faa1d605149d1a031f3aaf8b64dac schema:volumeNumber 35
87 rdf:type schema:PublicationVolume
88 Nb909c0eb02384a998ef4ac8c2c99d746 schema:name dimensions_id
89 schema:value pub.1010707498
90 rdf:type schema:PropertyValue
91 Ndb5d794a522b4cbabf1b352c78fce6cf schema:issueNumber 1
92 rdf:type schema:PublicationIssue
93 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
94 schema:name Engineering
95 rdf:type schema:DefinedTerm
96 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
97 schema:name Materials Engineering
98 rdf:type schema:DefinedTerm
99 sg:journal.1313824 schema:issn 1064-8887
100 1573-9228
101 schema:name Russian Physics Journal
102 schema:publisher Springer Nature
103 rdf:type schema:Periodical
104 sg:person.011514317211.38 schema:affiliation grid-institutes:grid.440628.c
105 schema:familyName Georgitsé
106 schema:givenName E. I.
107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011514317211.38
108 rdf:type schema:Person
109 sg:person.014304513617.23 schema:affiliation grid-institutes:grid.440628.c
110 schema:familyName Smirnov
111 schema:givenName V. A.
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014304513617.23
113 rdf:type schema:Person
114 sg:person.016342426307.11 schema:affiliation grid-institutes:grid.440628.c
115 schema:familyName Bazhenov
116 schema:givenName N. L.
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016342426307.11
118 rdf:type schema:Person
119 grid-institutes:grid.440628.c schema:alternateName Tiraspol' Pedagogical Institute, USSR
120 schema:name A. F. Ioffe Physicotechnical Institute, USSR Academy of Sciences, USSR
121 Tiraspol' Pedagogical Institute, USSR
122 rdf:type schema:Organization
 




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