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    "description": "The results are given of an investigation of the galvanomagnetic properties of manganese-doped gallium antimonide in the interval of temperatures 4.2\u2013300\u00b0K and in magnetic fields up to 1.5 T. The manganese was introduced into the melt during zone melting in concentrations in the range 0.005\u20131 at.%. The samples possessed p-type conduction. It was shown that manganese forms in gallium antimonide a shallow acceptor level with ionization energy 16 \u00b1 3 meV. The cluster mechanism makes a significant contribution to the carrier scattering in the considered temperature range. The parameters of this scattering mechanism were determined. It was shown that with increasing concentration of manganese in the sample the contribution to the mobility of the mechanism of carrier scattering by space-charge regions increases.", 
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