A novel method of introducing PbO dopant and (the study of) its influence on the electrical properties of semiconducting Cd2−xPbxSnO4 ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1989-11

AUTHORS

M. S. Setty

ABSTRACT

The sheet resistance of Cd2SnO4 thick films was reduced from 15580 to 0.09 kΩ with respect to dopant concentration and peak firing temperature (600 to 900° C). Distinct colour changes were observed in these films. The inorganic binder introduced an impurity which greatly induce changes in its electrical properties. The Arrhenius relation (logR−103/T) generally indicated slopes of 2 to 3 for all the compositions of Cd2−xPbxSnO4 (x=0.002, 0.01, 0.02, 0.04 and 0.1). The donor ionization energies (Ed) varied from 0.01 to 0.76 eV. Resistance measurements during heating-cooling cycles indicated the possible presence of structural defects such as oxygen vacancies and cadmium interstitials. The oxidation of dopant (Pb2+→Pb4++2e′) contributed in a major way to the overall conductivity. Scanning electron micrographs showed a progressive network formation due to sintering, thus contributing to the carrier mobility. More... »

PAGES

4120-4127

References to SciGraph publications

Journal

TITLE

Journal of Materials Science

ISSUE

11

VOLUME

24

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf01168984

DOI

http://dx.doi.org/10.1007/bf01168984

DIMENSIONS

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