Extended defects in sintered AIN View Full Text


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Article Info

DATE

1989-05

AUTHORS

M. F. Denanot, J. Rabier

ABSTRACT

Extended defects in the AIN grains of sintered material have been studied by transmission electron microscopy (TEM) as a function of the concentration of sintering additives (Y2O3). Evidence of dislocations and planar defects has been found. Using the weak beam technique, dislocations were found to be dissociated in the basal plane. The deduced reduced stacking fault energy,γ′, has been found to confirm the correlation betweenγ′ and the charge redistribution index in III–V and II–VI compounds. The formation of planar defects during sintering is also discussed. More... »

PAGES

1594-1598

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf01105676

DOI

http://dx.doi.org/10.1007/bf01105676

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045300686


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