Tunneling through the space charge region in a metal-amorphous silicon contact View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1986-11

AUTHORS

V. I. Strikha, V. V. Il'chenko

ABSTRACT

By solving for the potential barrier profile in metal-amorphous silicon contacts using an exponential distribution of the density of states in the energy spectrum mobility gap, we compute the voltage-current characteristics of such contacts taking into account tunneling through the space charge region. We demonstrate that as the density of states in the middle of the mobility gap increases, such tunneling leads to significant changes in the rectifying properties of a metal-amorphous silicon contact. More... »

PAGES

865-868

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf00898435

DOI

http://dx.doi.org/10.1007/bf00898435

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043751271


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