Peculiarities of the electrophysical characteristics of platinum silicide-silicon contacts under impulsive overloads View Full Text


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Article Info

DATE

1988-09

AUTHORS

M. G. Buzynnyi, V. V. Il'chenko, P. G. Lisnyak, V. I. Strikha

ABSTRACT

The extremal operating states of the active elements of integrated circuits and discrete devices as well as the different actions on semiconductor devices with a Schottky barrier based on metal silicide-silicon contacts lead to a change in their physical parameters. In this work the effect of impulsive overloads on a formed platinum silicide-silicon contact is studied. It is shown, with the help of analytical expressions for the currents in the superbarrier region and in the region of resonant tunneling charge transfer, that under impulsive action a change occurs in both the transitional layer and in the region of space charge; the change is associated with the increase in the concentration of deep levels in the region of space charge that participate in the resonance tunneling. Estimates of the Joule heating by the current flowing in the structures employed do not exceed 100°C, indicating that defect formation under the impulsive actions is nonthermal. More... »

PAGES

749-752

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf00895986

DOI

http://dx.doi.org/10.1007/bf00895986

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004791995


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "T. G. Shevchenko Kiev State University, USSR", 
          "id": "http://www.grid.ac/institutes/grid.34555.32", 
          "name": [
            "T. G. Shevchenko Kiev State University, USSR"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Buzynnyi", 
        "givenName": "M. G.", 
        "id": "sg:person.01323205472.89", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01323205472.89"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "T. G. Shevchenko Kiev State University, USSR", 
          "id": "http://www.grid.ac/institutes/grid.34555.32", 
          "name": [
            "T. G. Shevchenko Kiev State University, USSR"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Il'chenko", 
        "givenName": "V. V.", 
        "id": "sg:person.014575547231.52", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014575547231.52"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "T. G. Shevchenko Kiev State University, USSR", 
          "id": "http://www.grid.ac/institutes/grid.34555.32", 
          "name": [
            "T. G. Shevchenko Kiev State University, USSR"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lisnyak", 
        "givenName": "P. G.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "T. G. Shevchenko Kiev State University, USSR", 
          "id": "http://www.grid.ac/institutes/grid.34555.32", 
          "name": [
            "T. G. Shevchenko Kiev State University, USSR"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Strikha", 
        "givenName": "V. I.", 
        "id": "sg:person.014145046257.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014145046257.07"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1988-09", 
    "datePublishedReg": "1988-09-01", 
    "description": "The extremal operating states of the active elements of integrated circuits and discrete devices as well as the different actions on semiconductor devices with a Schottky barrier based on metal silicide-silicon contacts lead to a change in their physical parameters. In this work the effect of impulsive overloads on a formed platinum silicide-silicon contact is studied. It is shown, with the help of analytical expressions for the currents in the superbarrier region and in the region of resonant tunneling charge transfer, that under impulsive action a change occurs in both the transitional layer and in the region of space charge; the change is associated with the increase in the concentration of deep levels in the region of space charge that participate in the resonance tunneling. Estimates of the Joule heating by the current flowing in the structures employed do not exceed 100\u00b0C, indicating that defect formation under the impulsive actions is nonthermal.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/bf00895986", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1313824", 
        "issn": [
          "1064-8887", 
          "1573-9228"
        ], 
        "name": "Russian Physics Journal", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "9", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "31"
      }
    ], 
    "keywords": [
      "silicide-silicon contacts", 
      "space charge", 
      "semiconductor devices", 
      "Joule heating", 
      "discrete devices", 
      "operating states", 
      "Schottky barrier", 
      "electrophysical characteristics", 
      "transitional layer", 
      "active elements", 
      "defect formation", 
      "physical parameters", 
      "analytical expressions", 
      "devices", 
      "charge transfer", 
      "heating", 
      "contact", 
      "tunneling charge transfer", 
      "layer", 
      "circuit", 
      "current", 
      "charge", 
      "deep levels", 
      "resonance tunneling", 
      "parameters", 
      "tunneling", 
      "transfer", 
      "structure", 
      "characteristics", 
      "region", 
      "work", 
      "elements", 
      "formation", 
      "help", 
      "increase", 
      "effect", 
      "concentration", 
      "changes", 
      "barriers", 
      "estimates", 
      "peculiarities", 
      "state", 
      "overload", 
      "action", 
      "levels", 
      "different actions", 
      "impulsive action", 
      "expression"
    ], 
    "name": "Peculiarities of the electrophysical characteristics of platinum silicide-silicon contacts under impulsive overloads", 
    "pagination": "749-752", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1004791995"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/bf00895986"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/bf00895986", 
      "https://app.dimensions.ai/details/publication/pub.1004791995"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-12-01T06:20", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221201/entities/gbq_results/article/article_214.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/bf00895986"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

125 TRIPLES      20 PREDICATES      73 URIs      65 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/bf00895986 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N47797f4c7b4445f9a5086e4b9f911f60
4 schema:datePublished 1988-09
5 schema:datePublishedReg 1988-09-01
6 schema:description The extremal operating states of the active elements of integrated circuits and discrete devices as well as the different actions on semiconductor devices with a Schottky barrier based on metal silicide-silicon contacts lead to a change in their physical parameters. In this work the effect of impulsive overloads on a formed platinum silicide-silicon contact is studied. It is shown, with the help of analytical expressions for the currents in the superbarrier region and in the region of resonant tunneling charge transfer, that under impulsive action a change occurs in both the transitional layer and in the region of space charge; the change is associated with the increase in the concentration of deep levels in the region of space charge that participate in the resonance tunneling. Estimates of the Joule heating by the current flowing in the structures employed do not exceed 100°C, indicating that defect formation under the impulsive actions is nonthermal.
7 schema:genre article
8 schema:isAccessibleForFree false
9 schema:isPartOf N7769b6df684e43fc8de01afaf6bb9fe0
10 N7c06d099348c4810812108a2cc083553
11 sg:journal.1313824
12 schema:keywords Joule heating
13 Schottky barrier
14 action
15 active elements
16 analytical expressions
17 barriers
18 changes
19 characteristics
20 charge
21 charge transfer
22 circuit
23 concentration
24 contact
25 current
26 deep levels
27 defect formation
28 devices
29 different actions
30 discrete devices
31 effect
32 electrophysical characteristics
33 elements
34 estimates
35 expression
36 formation
37 heating
38 help
39 impulsive action
40 increase
41 layer
42 levels
43 operating states
44 overload
45 parameters
46 peculiarities
47 physical parameters
48 region
49 resonance tunneling
50 semiconductor devices
51 silicide-silicon contacts
52 space charge
53 state
54 structure
55 transfer
56 transitional layer
57 tunneling
58 tunneling charge transfer
59 work
60 schema:name Peculiarities of the electrophysical characteristics of platinum silicide-silicon contacts under impulsive overloads
61 schema:pagination 749-752
62 schema:productId N0fa4308685d7482f962ba81ca67702e4
63 N24d5a40e2fc24a2a816df8710f91af83
64 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004791995
65 https://doi.org/10.1007/bf00895986
66 schema:sdDatePublished 2022-12-01T06:20
67 schema:sdLicense https://scigraph.springernature.com/explorer/license/
68 schema:sdPublisher Nd98e541831444d26a5347cc863de208a
69 schema:url https://doi.org/10.1007/bf00895986
70 sgo:license sg:explorer/license/
71 sgo:sdDataset articles
72 rdf:type schema:ScholarlyArticle
73 N0d3353d6442045eea16f76d0617c1d01 rdf:first sg:person.014145046257.07
74 rdf:rest rdf:nil
75 N0fa4308685d7482f962ba81ca67702e4 schema:name dimensions_id
76 schema:value pub.1004791995
77 rdf:type schema:PropertyValue
78 N24d5a40e2fc24a2a816df8710f91af83 schema:name doi
79 schema:value 10.1007/bf00895986
80 rdf:type schema:PropertyValue
81 N47797f4c7b4445f9a5086e4b9f911f60 rdf:first sg:person.01323205472.89
82 rdf:rest N97d0005a30ee477a939c50a48a449477
83 N6eab5eb1fcd741d1b61889170d48b2b9 schema:affiliation grid-institutes:grid.34555.32
84 schema:familyName Lisnyak
85 schema:givenName P. G.
86 rdf:type schema:Person
87 N7769b6df684e43fc8de01afaf6bb9fe0 schema:issueNumber 9
88 rdf:type schema:PublicationIssue
89 N7c06d099348c4810812108a2cc083553 schema:volumeNumber 31
90 rdf:type schema:PublicationVolume
91 N97d0005a30ee477a939c50a48a449477 rdf:first sg:person.014575547231.52
92 rdf:rest Nd5254dfedc5b497a90228558a71b1673
93 Nd5254dfedc5b497a90228558a71b1673 rdf:first N6eab5eb1fcd741d1b61889170d48b2b9
94 rdf:rest N0d3353d6442045eea16f76d0617c1d01
95 Nd98e541831444d26a5347cc863de208a schema:name Springer Nature - SN SciGraph project
96 rdf:type schema:Organization
97 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
98 schema:name Engineering
99 rdf:type schema:DefinedTerm
100 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
101 schema:name Materials Engineering
102 rdf:type schema:DefinedTerm
103 sg:journal.1313824 schema:issn 1064-8887
104 1573-9228
105 schema:name Russian Physics Journal
106 schema:publisher Springer Nature
107 rdf:type schema:Periodical
108 sg:person.01323205472.89 schema:affiliation grid-institutes:grid.34555.32
109 schema:familyName Buzynnyi
110 schema:givenName M. G.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01323205472.89
112 rdf:type schema:Person
113 sg:person.014145046257.07 schema:affiliation grid-institutes:grid.34555.32
114 schema:familyName Strikha
115 schema:givenName V. I.
116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014145046257.07
117 rdf:type schema:Person
118 sg:person.014575547231.52 schema:affiliation grid-institutes:grid.34555.32
119 schema:familyName Il'chenko
120 schema:givenName V. V.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014575547231.52
122 rdf:type schema:Person
123 grid-institutes:grid.34555.32 schema:alternateName T. G. Shevchenko Kiev State University, USSR
124 schema:name T. G. Shevchenko Kiev State University, USSR
125 rdf:type schema:Organization
 




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