Tunnel-resonance current in metal-palladium-doped silicon junctions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1982-03

AUTHORS

E. V. Buzaneva, V. V. Il'chenko, V. I. Strikha

ABSTRACT

Results are presented of an investigation of the possibility of realizing the tunnel-resonance current transport mechanism in metal-semiconductor junctions. From an analysis of the temperature dependence of the current-voltage characteristic, it is concluded that the experimental singularities being observed in titanium-palladium-doped silicon junctions correspond to effects predicted by the theory of tunnel-resonance charge transport mechanism. More... »

PAGES

269-272

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf00891701

DOI

http://dx.doi.org/10.1007/bf00891701

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1039362723


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