New type of charged-particles detector based on point contacts formed in a GaAs-AlGaAs heterostructure by split-gates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1993-11

AUTHORS

K. Baklanov, R. Taboryski, P. E. Lindelof

ABSTRACT

We propose a new principle for a low temperature semiconductor detector of charged particles with possibly submicron lateral resolution based on point contacts formed in the 2-dimensional electron gas (2DEG) of a GaAs-AlxGa1-xAs heterostructure using split-gates. The detector operates up to liquid nitrogen temperatures. Impinging particles excite locally extra donors in the doping layer of the heterostructure. By measuring simultaneous increase in the conductances of 3 point contacts due to the impacts of charged particles the position of penetration is calculated using the Thomas-Fermi approximation for screening in 2DEG. More... »

PAGES

739-744

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf00693505

DOI

http://dx.doi.org/10.1007/bf00693505

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004369746


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