Low temperature transport properties of thin disordered vanadium oxide films View Full Text


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Article Info

DATE

1991-11

AUTHORS

A. K. Meikap, A. R. Jana, S. K. De, S. Chatterjee

ABSTRACT

Low temperature magnetoresistance measurements of vanadium oxide films have been performed. Both the resistance and magnetoresistance are well explained by weak electron localization and electron-electron interaction effects. The magnetoresistance due to weak electron localization is used to investigate inelastic and spin-orbit scattering times. Spin-orbit scattering time is independent of temperature. The temperature dependence of inelastic scattering time is compared with the theoretical values. In the temperature range 1.5 K≤T≤5 K, the inelastic scattering occurs due to only electron-electron interaction. More... »

PAGES

295-309

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf00681974

DOI

http://dx.doi.org/10.1007/bf00681974

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044120054


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