Point-contact diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1984-10

AUTHORS

H. D. Riccius, K. J. Siemsen

ABSTRACT

Point-contact diodes based either on the mechanism of electronic tunnelling through an insulating barrier or on the thermoelectric effect of hot carriers in heavily doped semiconductors are described. The requirements necessary for these devices to be used as harmonic generators and mixers in the 2–200 THz region are emphasized, and some new developments are reported. Outstanding characteristics of the devices which use either the semimetal antimony or the semiconductors SnTe or Bi2Te3 as a diode base are high detection sensitivity and high mechanical stability over long periods of use either as harmonic generators or as mixers. More... »

PAGES

67-74

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf00620632

DOI

http://dx.doi.org/10.1007/bf00620632

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004260370


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