Laser nonlinear-optical probing of silicon/SiO2 interfaces: Surface stress formation and relaxation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1990-04

AUTHORS

S. V. Govorkov, N. I. Koroteev, G. I. Petrov, I. L. Shumay, V. V. Yakovlev

ABSTRACT

A nonlinear optical technique based on optical second harmonic generation in reflection is shown to provide information on the surface layer structure of semiconductor crystals, thin films and layered systems. The second harmonic intensity is sensitive to inhomogeneous stress in centrosymmetric materials via spatial selection rules and the appearance of an electric dipole contribution to the second order nonlinear optical susceptibility. The technique is used to monitor mechanical stress relaxation in the SiO2/Si interface during several annealing procedures. More... »

PAGES

439-443

Journal

TITLE

Applied Physics A

ISSUE

4

VOLUME

50

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf00323603

DOI

http://dx.doi.org/10.1007/bf00323603

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006629655


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