Characterization of multilayer-interfaces by X-ray diffraction, TEM, SNMS and AES View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1993-01

AUTHORS

S. Hopfe, N. Kallis, H. Mai, W. Pompe, R. Scholz, S. Völlmar, B. Wehner, P. Weißbrot

ABSTRACT

Prototypes of Ni-C multilayers (up to 40 periods of typically 5 nm thickness) have been prepared by laser pulse vapour deposition (LPVD) and analyzed by a variety of methods. The work showed near normal X-ray reflectivities of typically 5%; an interface roughness ranging from <1 Å (determined by image processing of TEM micrographs) to 5 Å (determined by simulation of X-ray diffraction); a compensation for the roughness component that is caused by the substrate surface and impurity concentrations <1 at.−% in layers and in interfacial regions. X-ray diffraction, transmission electron microscopy and image processing have been successfully used for the investigation of the interfacial regions, whereas depth profiling methods that involve sputtering (SNMS and AES) can not provide resolution below 10 Å. More... »

PAGES

14-22

References to SciGraph publications

  • 1988. Multilayer Optics for X-Rays in PHYSICS, FABRICATION, AND APPLICATIONS OF MULTILAYERED STRUCTURES
  • 1993-01. Surface analysis by means of reflection, fluorescence and diffuse scattering of hard X-ray in JOURNAL OF ANALYTICAL CHEMISTRY
  • 1991-03. Peculiarities of AES-depth profiling results from multilayered X-ray monochromators in JOURNAL OF ANALYTICAL CHEMISTRY
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    http://scigraph.springernature.com/pub.10.1007/bf00321375

    DOI

    http://dx.doi.org/10.1007/bf00321375

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