Weak localization experiments on magnesium films: effects of substrate, ion implantation, microwaves, temperature, and resistivity/thickness on the phase and spin-orbit ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1988-06

AUTHORS

Shiguang Wang, P. E. Lindelof

ABSTRACT

Weak localization magnetoresistance is used to investigate spin-orbit and the phase relaxation rates. The spin-orbit rate is independent of temperature. By plotting the spin-orbit rate as a function of the inverse thickness of the films, we separate the spin-orbit relaxation into two parts: one from the scattering off the bulk imperfections, and one from the scattering against the two surfaces. The ratio between the spin-orbit and the impurity relaxation rates in the bulk was found to be close to 2 × 10−5 for all the different samples. The influence of implanted heavy ions on the spin-orbit relaxation was also investigated. The dependence of the phase relaxation rate on resistivity, film thickness, and temperature has been studied. Theoretical results for electron-electron and electron-phonon scattering are compared to our data. We consider two novel temperature-independent phase relaxation mechanisms which may explain the residual rate we observe. The influence of a high-frequency electromagnetic field on the phase relaxation rate was investigated. For small microwave power levels the phase relaxation rate was found to increase linearly with microwave power. In the absence of a magnetic field and for samples having a dominating spin-orbit interaction (antilocalization) the resistance increases with microwave power, but turns into a decrease at high microwave power levels. For those samples having very weak spin-orbit interaction the resistance decreases continuously as we apply microwaves. This is roughly the expected behavior, but the observed change in resistance was larger than that calculated at small microwave power levels. More... »

PAGES

403-444

References to SciGraph publications

  • 1984-09. Electron-electron interaction and weak localization in JOURNAL OF LOW TEMPERATURE PHYSICS
  • 1985-12. Magnetoresistance in two-dimensional magnesium films of various thicknesses in ZEITSCHRIFT FÜR PHYSIK B CONDENSED MATTER
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/bf00116871

    DOI

    http://dx.doi.org/10.1007/bf00116871

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1003429278


    Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
    Incoming Citations Browse incoming citations for this publication using opencitations.net

    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Physical Sciences", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Other Physical Sciences", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "Physics Laboratory, H. C. \u00f8rsted Institute, University of Copenhagen, Denmark", 
              "id": "http://www.grid.ac/institutes/grid.5254.6", 
              "name": [
                "Physics Laboratory, H. C. \u00f8rsted Institute, University of Copenhagen, Denmark"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Wang", 
            "givenName": "Shiguang", 
            "id": "sg:person.016640530735.09", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016640530735.09"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Physics Laboratory, H. C. \u00f8rsted Institute, University of Copenhagen, Denmark", 
              "id": "http://www.grid.ac/institutes/grid.5254.6", 
              "name": [
                "Physics Laboratory, H. C. \u00f8rsted Institute, University of Copenhagen, Denmark"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Lindelof", 
            "givenName": "P. E.", 
            "id": "sg:person.0760402255.50", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0760402255.50"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1007/bf01328852", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1048928540", 
              "https://doi.org/10.1007/bf01328852"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/bf00681807", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1048706308", 
              "https://doi.org/10.1007/bf00681807"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "1988-06", 
        "datePublishedReg": "1988-06-01", 
        "description": "Weak localization magnetoresistance is used to investigate spin-orbit and the phase relaxation rates. The spin-orbit rate is independent of temperature. By plotting the spin-orbit rate as a function of the inverse thickness of the films, we separate the spin-orbit relaxation into two parts: one from the scattering off the bulk imperfections, and one from the scattering against the two surfaces. The ratio between the spin-orbit and the impurity relaxation rates in the bulk was found to be close to 2 \u00d7 10\u22125 for all the different samples. The influence of implanted heavy ions on the spin-orbit relaxation was also investigated. The dependence of the phase relaxation rate on resistivity, film thickness, and temperature has been studied. Theoretical results for electron-electron and electron-phonon scattering are compared to our data. We consider two novel temperature-independent phase relaxation mechanisms which may explain the residual rate we observe. The influence of a high-frequency electromagnetic field on the phase relaxation rate was investigated. For small microwave power levels the phase relaxation rate was found to increase linearly with microwave power. In the absence of a magnetic field and for samples having a dominating spin-orbit interaction (antilocalization) the resistance increases with microwave power, but turns into a decrease at high microwave power levels. For those samples having very weak spin-orbit interaction the resistance decreases continuously as we apply microwaves. This is roughly the expected behavior, but the observed change in resistance was larger than that calculated at small microwave power levels.", 
        "genre": "article", 
        "id": "sg:pub.10.1007/bf00116871", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1030474", 
            "issn": [
              "0022-2291", 
              "1573-7357"
            ], 
            "name": "Journal of Low Temperature Physics", 
            "publisher": "Springer Nature", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "5-6", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "71"
          }
        ], 
        "keywords": [
          "spin-orbit relaxation", 
          "phase relaxation rate", 
          "spin-orbit interaction", 
          "relaxation rate", 
          "weak spin-orbit interaction", 
          "implanted heavy ions", 
          "microwave power", 
          "weak localization experiments", 
          "electron-phonon scattering", 
          "phase relaxation mechanism", 
          "microwave power levels", 
          "weak-localization magnetoresistance", 
          "power levels", 
          "heavy ions", 
          "electron-electron", 
          "high-frequency electromagnetic field", 
          "ion implantation", 
          "magnetic field", 
          "high microwave power levels", 
          "electromagnetic field", 
          "relaxation mechanism", 
          "magnesium films", 
          "scattering", 
          "film thickness", 
          "impurity relaxation rate", 
          "inverse thickness", 
          "effect of substrate", 
          "bulk imperfections", 
          "films", 
          "relaxation", 
          "theoretical results", 
          "microwave", 
          "field", 
          "thickness", 
          "temperature", 
          "magnetoresistance", 
          "ions", 
          "resistivity", 
          "dependence", 
          "power", 
          "different samples", 
          "bulk", 
          "interaction", 
          "substrate", 
          "surface", 
          "imperfections", 
          "observed changes", 
          "phase", 
          "samples", 
          "experiments", 
          "implantation", 
          "ratio", 
          "influence", 
          "function", 
          "rate", 
          "behavior", 
          "effect", 
          "results", 
          "mechanism", 
          "decrease", 
          "data", 
          "levels", 
          "part", 
          "resistance", 
          "changes", 
          "localization experiments", 
          "absence", 
          "residual rate"
        ], 
        "name": "Weak localization experiments on magnesium films: effects of substrate, ion implantation, microwaves, temperature, and resistivity/thickness on the phase and spin-orbit relaxation", 
        "pagination": "403-444", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1003429278"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1007/bf00116871"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1007/bf00116871", 
          "https://app.dimensions.ai/details/publication/pub.1003429278"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2022-09-02T15:45", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20220902/entities/gbq_results/article/article_187.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1007/bf00116871"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/bf00116871'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/bf00116871'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/bf00116871'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/bf00116871'


     

    This table displays all metadata directly associated to this object as RDF triples.

    140 TRIPLES      21 PREDICATES      95 URIs      85 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1007/bf00116871 schema:about anzsrc-for:02
    2 anzsrc-for:0299
    3 schema:author N1d781856aadc4bfc9795c2abe86519f9
    4 schema:citation sg:pub.10.1007/bf00681807
    5 sg:pub.10.1007/bf01328852
    6 schema:datePublished 1988-06
    7 schema:datePublishedReg 1988-06-01
    8 schema:description Weak localization magnetoresistance is used to investigate spin-orbit and the phase relaxation rates. The spin-orbit rate is independent of temperature. By plotting the spin-orbit rate as a function of the inverse thickness of the films, we separate the spin-orbit relaxation into two parts: one from the scattering off the bulk imperfections, and one from the scattering against the two surfaces. The ratio between the spin-orbit and the impurity relaxation rates in the bulk was found to be close to 2 × 10−5 for all the different samples. The influence of implanted heavy ions on the spin-orbit relaxation was also investigated. The dependence of the phase relaxation rate on resistivity, film thickness, and temperature has been studied. Theoretical results for electron-electron and electron-phonon scattering are compared to our data. We consider two novel temperature-independent phase relaxation mechanisms which may explain the residual rate we observe. The influence of a high-frequency electromagnetic field on the phase relaxation rate was investigated. For small microwave power levels the phase relaxation rate was found to increase linearly with microwave power. In the absence of a magnetic field and for samples having a dominating spin-orbit interaction (antilocalization) the resistance increases with microwave power, but turns into a decrease at high microwave power levels. For those samples having very weak spin-orbit interaction the resistance decreases continuously as we apply microwaves. This is roughly the expected behavior, but the observed change in resistance was larger than that calculated at small microwave power levels.
    9 schema:genre article
    10 schema:isAccessibleForFree false
    11 schema:isPartOf N9324560367174a8bb51a65b97de3603c
    12 Na3300554f9bb4953b176fcfe83180d19
    13 sg:journal.1030474
    14 schema:keywords absence
    15 behavior
    16 bulk
    17 bulk imperfections
    18 changes
    19 data
    20 decrease
    21 dependence
    22 different samples
    23 effect
    24 effect of substrate
    25 electromagnetic field
    26 electron-electron
    27 electron-phonon scattering
    28 experiments
    29 field
    30 film thickness
    31 films
    32 function
    33 heavy ions
    34 high microwave power levels
    35 high-frequency electromagnetic field
    36 imperfections
    37 implantation
    38 implanted heavy ions
    39 impurity relaxation rate
    40 influence
    41 interaction
    42 inverse thickness
    43 ion implantation
    44 ions
    45 levels
    46 localization experiments
    47 magnesium films
    48 magnetic field
    49 magnetoresistance
    50 mechanism
    51 microwave
    52 microwave power
    53 microwave power levels
    54 observed changes
    55 part
    56 phase
    57 phase relaxation mechanism
    58 phase relaxation rate
    59 power
    60 power levels
    61 rate
    62 ratio
    63 relaxation
    64 relaxation mechanism
    65 relaxation rate
    66 residual rate
    67 resistance
    68 resistivity
    69 results
    70 samples
    71 scattering
    72 spin-orbit interaction
    73 spin-orbit relaxation
    74 substrate
    75 surface
    76 temperature
    77 theoretical results
    78 thickness
    79 weak localization experiments
    80 weak spin-orbit interaction
    81 weak-localization magnetoresistance
    82 schema:name Weak localization experiments on magnesium films: effects of substrate, ion implantation, microwaves, temperature, and resistivity/thickness on the phase and spin-orbit relaxation
    83 schema:pagination 403-444
    84 schema:productId N131da5c0080140629f0ce0482a6b28d1
    85 Nbed6e4d81dc54ff89a32e92c8281fe16
    86 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003429278
    87 https://doi.org/10.1007/bf00116871
    88 schema:sdDatePublished 2022-09-02T15:45
    89 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    90 schema:sdPublisher N414fd5d263e648ddac084556b19ae239
    91 schema:url https://doi.org/10.1007/bf00116871
    92 sgo:license sg:explorer/license/
    93 sgo:sdDataset articles
    94 rdf:type schema:ScholarlyArticle
    95 N131da5c0080140629f0ce0482a6b28d1 schema:name dimensions_id
    96 schema:value pub.1003429278
    97 rdf:type schema:PropertyValue
    98 N1d781856aadc4bfc9795c2abe86519f9 rdf:first sg:person.016640530735.09
    99 rdf:rest N6b8496a059a8445497863cdd16aba247
    100 N414fd5d263e648ddac084556b19ae239 schema:name Springer Nature - SN SciGraph project
    101 rdf:type schema:Organization
    102 N6b8496a059a8445497863cdd16aba247 rdf:first sg:person.0760402255.50
    103 rdf:rest rdf:nil
    104 N9324560367174a8bb51a65b97de3603c schema:volumeNumber 71
    105 rdf:type schema:PublicationVolume
    106 Na3300554f9bb4953b176fcfe83180d19 schema:issueNumber 5-6
    107 rdf:type schema:PublicationIssue
    108 Nbed6e4d81dc54ff89a32e92c8281fe16 schema:name doi
    109 schema:value 10.1007/bf00116871
    110 rdf:type schema:PropertyValue
    111 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
    112 schema:name Physical Sciences
    113 rdf:type schema:DefinedTerm
    114 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
    115 schema:name Other Physical Sciences
    116 rdf:type schema:DefinedTerm
    117 sg:journal.1030474 schema:issn 0022-2291
    118 1573-7357
    119 schema:name Journal of Low Temperature Physics
    120 schema:publisher Springer Nature
    121 rdf:type schema:Periodical
    122 sg:person.016640530735.09 schema:affiliation grid-institutes:grid.5254.6
    123 schema:familyName Wang
    124 schema:givenName Shiguang
    125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016640530735.09
    126 rdf:type schema:Person
    127 sg:person.0760402255.50 schema:affiliation grid-institutes:grid.5254.6
    128 schema:familyName Lindelof
    129 schema:givenName P. E.
    130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0760402255.50
    131 rdf:type schema:Person
    132 sg:pub.10.1007/bf00681807 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048706308
    133 https://doi.org/10.1007/bf00681807
    134 rdf:type schema:CreativeWork
    135 sg:pub.10.1007/bf01328852 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048928540
    136 https://doi.org/10.1007/bf01328852
    137 rdf:type schema:CreativeWork
    138 grid-institutes:grid.5254.6 schema:alternateName Physics Laboratory, H. C. ørsted Institute, University of Copenhagen, Denmark
    139 schema:name Physics Laboratory, H. C. ørsted Institute, University of Copenhagen, Denmark
    140 rdf:type schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...