The low-frequency, low-temperature dielectric behavior of n-type germanium below the insulator-metal transition View Full Text


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Article Info

DATE

1980-02

AUTHORS

T. G. Castner, N. K. Lee, H. S. Tan, L. Moberly, O. Symko

ABSTRACT

Dielectric constant and ac conductance measurements of a number of n-type Ge samples (mostly Sb-doped) have been made with a low-frequency, three-terminal capacitance bridge between 4.2 and 0.011 K. From the concentration dependence of the low-temperature asymptotic values of the dielectric constant the value of the polarizability of the Sb donor has been determined to be αSb = (7.3 ± 1.0) × 106 »3. When employed with a new theory of the polarizability enhancement αD(N)/αD(0) and the Clausius-Mossotti expression, a calculated value of Nc,calc = 2.5 × 1017/cm3 is obtained for the onset of metallic behavior for Ge:Sb. Although much larger than the current value of 1 × 1017/cm accepted in the literature, a correction of the neutral donor densities employing room-temperature resistivities and the Sze-Irvine curve rather than Hall coefficient data as applied to the transport data of Fritzsche shows Nc,expt ≈ (1.9 ± 0.1) × 1017/cm. Data on ultra high-purity Ge samples yield a host dielectric constant ɛGe = 15.40−0.08+0.01 (after a Kramers-Kronig analysis correction to remove a hopping conductivity contribution to ɛ), in excellent agreement with the value of 15.36 determined by Faulkner from the positions of the 2p and 3p levels of the Sb shallow donors. The data demonstrate the importance of the Kramers-Kronig analysis in obtaining values of ɛ(N) without any conductivity contribution. The ac conductance data are also briefly discussed. More... »

PAGES

447-473

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/bf00114337

DOI

http://dx.doi.org/10.1007/bf00114337

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1051277718


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