Ontology type: schema:Chapter Open Access: True
2019
AUTHORSN. K. M’Sirdi , K. Frifita , E. Baghaz , A. Naamane , M. Boussak
ABSTRACTThis paper proposes a State Space Model for a power a Silicon Carbide (SiC) MOSFET. The model uses the electrical EKV MOSFET structure. The model is developed for the SiC MOSFET C2M0025120D CREE (1200V, 90A) and uses the parameters extracted from datasheet.
PAGES298-305
Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy
ISBN
978-981-13-1404-9
978-981-13-1405-6
http://scigraph.springernature.com/pub.10.1007/978-981-13-1405-6_36
DOIhttp://dx.doi.org/10.1007/978-981-13-1405-6_36
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