State Space Models for Power SiC MOSFET View Full Text


Ontology type: schema:Chapter      Open Access: True


Chapter Info

DATE

2019

AUTHORS

N. K. M’Sirdi , K. Frifita , E. Baghaz , A. Naamane , M. Boussak

ABSTRACT

This paper proposes a State Space Model for a power a Silicon Carbide (SiC) MOSFET. The model uses the electrical EKV MOSFET structure. The model is developed for the SiC MOSFET C2M0025120D CREE (1200V, 90A) and uses the parameters extracted from datasheet.

PAGES

298-305

Book

TITLE

Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy

ISBN

978-981-13-1404-9
978-981-13-1405-6

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-981-13-1405-6_36

DOI

http://dx.doi.org/10.1007/978-981-13-1405-6_36

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1105944074


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