Ontology type: schema:Chapter Open Access: True
2019
AUTHORSK. Frifita , N. K. M’Sirdi , E. Baghaz , A. Naamane , M. Boussak
ABSTRACTThis paper proposes an electro thermal model for power silicon carbide (SiC) MOSFET based on the EKV MOSFET structure. The thermal dissipation is modeled as an RC Network. The model is developed for the SiC MOSFET C2M0025120D CREE (1200 V, 90 A) and integrated in the Psim, Saber and Pspice simulation software libraries for prototyping. The simulation curves are compared with the manufacturers’ data-sheet. More... »
PAGES239-249
Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy
ISBN
978-981-13-1404-9
978-981-13-1405-6
http://scigraph.springernature.com/pub.10.1007/978-981-13-1405-6_29
DOIhttp://dx.doi.org/10.1007/978-981-13-1405-6_29
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