Electro-Thermal Model of a Silicon Carbide Power MOSFET View Full Text


Ontology type: schema:Chapter      Open Access: True


Chapter Info

DATE

2019

AUTHORS

K. Frifita , N. K. M’Sirdi , E. Baghaz , A. Naamane , M. Boussak

ABSTRACT

This paper proposes an electro thermal model for power silicon carbide (SiC) MOSFET based on the EKV MOSFET structure. The thermal dissipation is modeled as an RC Network. The model is developed for the SiC MOSFET C2M0025120D CREE (1200 V, 90 A) and integrated in the Psim, Saber and Pspice simulation software libraries for prototyping. The simulation curves are compared with the manufacturers’ data-sheet. More... »

PAGES

239-249

References to SciGraph publications

Book

TITLE

Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy

ISBN

978-981-13-1404-9
978-981-13-1405-6

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-981-13-1405-6_29

DOI

http://dx.doi.org/10.1007/978-981-13-1405-6_29

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1105944318


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