Conclusion and Future Works on High-Voltage Application of Graphene View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

2018

AUTHORS

Iraj Sadegh Amiri , Mahdiar Ghadiry

ABSTRACT

Shrinking transistor sizes has been the most feasible and effective approach to reduce power and delay of MOSFETs for decades. However, by reaching the nanoscale dimensions, silicon is facing limitations for downscaling such as short-channel effects. As a result, new device concepts such as graphene FETs are being introduced as alternatives to silicon. Since graphene has a zero bandgap, graphene nanoribbon of this material has been introduced to open a bandgap, which was the focus of this study. More... »

PAGES

85-86

Book

TITLE

Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

ISBN

978-981-10-6549-1
978-981-10-6550-7

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-981-10-6550-7_5

DOI

http://dx.doi.org/10.1007/978-981-10-6550-7_5

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092444623


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