1991
AUTHORSG. Van Tendeloo , C. Goessens , D. Schryvers , J. Van Havenbergh , A. De Veirman , J. Van Landuyt
ABSTRACTElectron microscopy and electron diffraction are shown to be most useful for the characterisation of different interfaces in new materials. High resolution microscopy provides atomic scale information on the local structure of such interfaces. These structural characteristics strongly influence the physical properties of the materials. We will study planar interfaces in the high Tc superconductor YBa2Cu3O7-δ, in silverhalogenides such as AgC1, in the luminescent Y1-x(Sr,Li)xTa04 and in semiconductor devices. More... »
PAGES200-209
Interfaces in New Materials
ISBN
978-1-85166-693-5
978-94-011-3680-8
http://scigraph.springernature.com/pub.10.1007/978-94-011-3680-8_20
DOIhttp://dx.doi.org/10.1007/978-94-011-3680-8_20
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