Photovoltaic Properties of an Epitaxial Cds/Cdte/ZnTe n-i-p Heterostructure Grown by Movpe View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1991

AUTHORS

M. Y. Simmons , H. M. Al-Allak , K. Durose , A. W. Brinkman

ABSTRACT

Epitaxial ZnTe/CdTe/CdS p-i-n heterostructures have been fabricated by the MOVPE growth of CdTe and subsequently ZnTe onto n-type single crystal (0001) CdS substrates. Analysis of the current-voltage characteristics suggests that the electrical transport across the junctions is dominated by a multi-step tunnelling process. Preliminary photovoltaic measurements without optimisation of the contact geometries gave open circuit voltages of up to 0.1 V and short circuit currents of 5 mA cm−2. The fill factor of devices formed was low −0.33 mainly due to the highly resistive p-ZnTe layer. More... »

PAGES

570-573

Book

TITLE

Tenth E.C. Photovoltaic Solar Energy Conference

ISBN

978-0-7923-1389-2
978-94-011-3622-8

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-94-011-3622-8_145

DOI

http://dx.doi.org/10.1007/978-94-011-3622-8_145

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1042102688


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