Excited State Populations of the Quantum Wells of Double Barrier Resonant Tunneling Structures View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1993

AUTHORS

P.D. Buckle , J. W. Cockburn , M. S. Skolnick , D. M. Whittaker , W. I. E. Tagg , R. Grey , G. Hill , M. A. Pate

ABSTRACT

The observation of electroluminescence recombination from electrons in both ground (El) and excited states (E2) of the quantum wells of double barrier resonant tunneling structures is reported. Analysis of the relative intensities of luminescence from the El and E2 levels permits deduction of their relative populations. The population ratios of the E2 to El levels are shown to be controlled by the ratio of the inter-sub-band scattering rate to the tunneling-out rate from the quantum wells. Deliberate engineering of these ratios by variation of the collector barrier width is reported. More... »

PAGES

377-385

Book

TITLE

Optical Phenomena in Semiconductor Structures of Reduced Dimensions

ISBN

978-94-010-4845-3
978-94-011-1912-2

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-94-011-1912-2_33

DOI

http://dx.doi.org/10.1007/978-94-011-1912-2_33

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021931509


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