Laser-Assisted Chemical Etching of Diamond Films in Oxygen View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1995

AUTHORS

V. G. Ralchenko , K. G. Korotushenko , A. A. Smolin , E. D. Obraztsova , E. N. Loubnin

ABSTRACT

The patterning of diamond films is required in many applications, in particular, in fabrication of diamond-based electronic devices. We report on the use of low power (≈2 W) continuous wave Ar + laser for etching (engraving) of diamond films via laser-induced local oxidation reaction. Smooth fine-grained diamond films of about 10 μm thickness have been grown on Mo and Si substrates in a DC arc discharge using CH4/H2 gas mixtures. The sharply focussed laser beam was scanned under a computer control over the film surface causing the diamond oxidation in air or pure oxygen atmosphere. Various trenches and holes of a few microns size have been produced at high etch rate. More... »

PAGES

219-224

Book

TITLE

Wide Band Gap Electronic Materials

ISBN

978-94-010-4078-5
978-94-011-0173-8

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-94-011-0173-8_21

DOI

http://dx.doi.org/10.1007/978-94-011-0173-8_21

DIMENSIONS

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