Plasma Optimisation for Intrinsic and Doped a-Si:H Films View Full Text


Ontology type: schema:Chapter     


Chapter Info

DATE

1987

AUTHORS

P. Roca i Cabarrocas , B. Equer , J. Huc , A. Lloret , J. P. M. Schmitt

ABSTRACT

Intrinsic and doped hydrogenated amorphous silicon (a-Si:H) films produced in several silane RF discharges are studied. The a-Si:H layers are grown in the new reactor “Arcam”, a hot wall, multiplasma single vacuum vessel reactor. The properties of thè material deposited under different conditions (pressure, RF power, substrate temperature), as well as the influence of electrodes geometry are reported and discussed. The material is characterized by photothermal deflection spectroscopy, ellipsometry, dark conductivity and SCLC measurements. The lowest defect densities are achieved in the 100–250°C range (Ns=3x1015cm−3 at 200°C). Preliminary results on solar cells, with efficiency over 6%, are presented. More... »

PAGES

533-538

Book

TITLE

Seventh E.C. Photovoltaic Solar Energy Conference

ISBN

978-94-010-8198-6
978-94-009-3817-5

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/978-94-009-3817-5_94

DOI

http://dx.doi.org/10.1007/978-94-009-3817-5_94

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1011251623


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